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We report on Atomic Layer Deposition Titanium (ALD Ti) for FinFET source/drain contact applications. On planar test structures, we accurately benchmark contact resistivity (ρc) of ALD Ti, ∼1.4×10–9 Ω·cm2 on Si:P and ∼2.0×10–9 Ω·cm2 on SiGe:B, among to lowest reported values in literature. Ultralow ρc is resulting from enhanced Ti/Si(Ge) reactivity originating in the ALD process. We also demonstrate...
Transparent conductive oxides (TCOs) are critical materials in display manufacturing. For a long time these type of materials have been regarded purely as degenerated semiconductors, and the electrical contact resistance to metals has been neglected in comparison with the high resistivity of the bulk material. However, as the display size has increased and the contact area has decreased, a metal layer...
The metal-semiconductor contact resistance is an important factor in the performance of MOSFETs and a detailed understanding of the contact resistance is necessary in order to simulate and eventually optimize the devices. In this work we calculate metal-InGaAs contact resistances using Density Functional Theory (DFT) combined with non-equilibrium Greens function (NEGF) methods as implemented in Atomistix...
The continuous downward scaling in integrated circuit (IC) technologies has led to rapid shrinking of transistor and interconnect feature sizes. Scaling causes reduction in interconnect linewidth, which leads to surge in resistance due to increased contributions from grain boundary and surface scattering of electrons in the metal lines. Further, current density inside interconnects is also enhanced...
In this paper, a 3D metal-graphene contact with different contact structures (i.e., embedded contact and edge contact) is studied using Kirchhoff model. The influences of some major factors, including metal resistivity, metal-graphene contact resistivity and sheet resistances of graphene both in the channel and under metal, on the total contact resistance are investigated. The sheet resistance of...
For silicon solar cell, the contact resistance and other series resistance component must be low so that the fill factor (FF) will be high for maximum power extraction. This work measures the contact resistance of mono crystalline silicon cell with respect to micro and nano particle Ag in the metal paste. Nano paste Ag possess lower contact resistance than the micro counterpart. Also in the metal...
The electrically conductive adhesives (ECAs) are the emerging materials that can provide a lot of opportunities for the electronic manufacturing. They have much lower processing temperatures comparing to soldering, that reduces the heat impact on the components. Due to their properties they can be applied for interconnecting the temperature sensitive elements in the devices, for example in liquid-crystal...
We perform a comparative analysis of metal-Si and metal-insulator-Si (MIS) contacts and quantify the impact of the contact/via resistances on logic performance. Our results show that silicide contacts account for 32% degradation in the ON current of an nFinFET (ION) compared to ideal contact. MIS contacts which lead to lowering of Schottky barrier height provide 12% performance gain at iso-energy...
The authors extract contact resistivity of NiGe layers on phosphorus-doped and arsenic-doped germanium, using the Transfer Length Method. It is shown experimentally that higher implant dose yields lower contact resistivity. Furthermore phosphorus is a better choice of dopant in terms of contact resistance and sheet resistance at low activation anneal temperatures, such as 500 °C. The impact of high...
Here we report a systematic study on the contact and sheet resistances of vertically aligned carbon nanotube (CNT) forest in gas sensing applications. Four different methods: (1) transfer length method (TLM), (2) contact chain method, (3) Kelvin method and (4) four-point probe method have been implemented. Experimental results show prototype CNT forest with the stripe-shape of 100 μm in height and...
We carefully measured the contact voltage (Vc) and contact current(Ic) of breaking Ag contacts at the melting voltage of Ag (Um) using a precisely controlled piezoelectric actuator. Using the equivalent energizing circuit with a DC power source, a load resistance and a contact resistance, we discussed two different melting phenomena decided by energizing electric circuit. The threshold of the two...
We present the effect of active carrier concentration on the specific contact resistivity (ρc) of in-situ molybdenum (Mo) Ohmic contacts to n-type InAs. It is observed that, although the Fermi level pins in the conduction band for InAs, the contact resistivity decreases with the increase in InAs active carrier concentration. The lowest ρc obtained through transmission line model measurements was (0...
Nano-to-micro electrical contact resistance between carbon nanotubes (CNTs) and larger-scale silicon systems are investigated using both low-and high-power annealing techniques. Carbon nanotubes locally synthesized and suspended between two silicon microbridges are used as the test platform. The annealing technique involves Joule heating of either the CNT/silicon system or the secondary silicon bridge...
We report on high current, low contact resistance, platinum-coated, lever-based CMOS-MEMS electrothermal probes with embedded displacement and force sensors for MEMS Instrumented Self-Configuring Integrated Circuits (MISCICs). The MISCIC vision is to use MEMS conductive probes to reconfigure ICs, mainly RF ICs such as inductors, by mechanically addressing and passing current pulses through resistance...
In this paper, we examined the applicability of the trench filled contact technique for the self-aligned dual metal contact for 3D MOSFET through both experiments and simulation. The proposed contact technique has the lower parasitic resistance and capacitance compared with the conventional silicide and with the elevated source/drain structure. Using this technique, the ITRS requirement for the source/drain...
Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random Access Memory (PCRAM) cell. In this article, titanium tungsten (Ti0.3W0.7) to two phase change materials; doped-Sb2Te and Ge2Sb2Te5 are characterised using Circular Transfer Length Method (CTLM) structures. A metal lift off process with a maximum...
An array of transfer length mode (TLM) structures were designed and made on electrically isolated phosphourous -doped hydrogenated amorphous silicon (a-Si:H) thin films. Annealing effects on NiCr/a-Si:H contacts in the temperature rang from 100 degC to 400degC were studied. Electrical measurements were performed to characterize the interaction of the contact between NiCr alloy and doped a-Si:H thin...
The resistance of wiring with a width of less than 40 nm was firstly evaluated by using an EUV lithography (lambda=13.5 nm). The resistance was quite high in narrow wiring with conventional Ta barrier film, while a very low effective resistivity rhoeff of lower than 4.5 muOmega cm was obtained by using PVD-Ru barrier film. This difference was attributed to combination of thinner barrier metal films...
Two approaches for structuring thin metal layers for seed and growth metallization for back-contacted solar cells using hot-melt inkjet as masking technology are evaluated. The characteristics of a hot-melt printed image relevant for process development are discussed. A metal lift-off process and a metal etching process, both creating a meander-shaped opening in a metal layer - hence an interdigitated...
Nanocomposite elastomer is an exciting, emerging class of materials for polymer MEMS sensors and actuators . It is made by mixing electrically conducting particles (e.g., carbon nanotubes) in regular, nonconducting elastomer (e.g., PDMS) beyond percolation limit. The bulk resistance of the polymer is a function of particle doping concentration and other parameters (e.g., applied stress). The electrical...
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