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Alloyed ohmic contacts to GaAs consist of separate alloyed and unalloyed layers beneath the contact metal layer. (A similar situation is metal to silicide to silicon contacts.) Thus there are three distinct layers separated by two interfaces, each layer having a different resistivity and each interface having a different specific contact resistance. Such a multiple layer contact makes the modeling...
In this paper, a novel device structure Gate-Inside Organic Field Effect Transistors (GI-OFET) for Organic Field Effect Transistor (OFET) has been proposed. An analytical model for the proposed OFET structure has been developed. This analytical modeling is based on the device physics and contact resistance of the proposed device. This innovative structure shows significant performance enhancement...
Quasi-ballistic electron transport in ultrashort FDSOI devices is analyzed using Multi-Subband Monte Carlo (MSMC) simulations, taking into account the main scattering mechanisms: phonons, surface roughness, and charged impurities in the access regions. In particular, the ballistic resistance (defined as the resistance of the channel in absence of scattering) was extracted from ballistic simulations,...
In this paper, a simulation model of an electromagnetic rail launcher system based on PSpice software is applied, in consideration of multi-physics factors, such as current skin effect, contact pressure and contact resistance on the contact surface of the armature and the barrel, velocity skin effect, friction drag and temperature coefficient of resistivity. Analyses were made on the effects of various...
This paper proposes an analytical model for bottom gate structures of Organic Field Effect Transistors (OFETs). Structural analysis and significant advantages of top contact over bottom contact devices are demonstrated by 2-D numerical device simulation. Top contact devices observe relatively small contact resistance as compared to bottom contact one due to larger injection area. It results in higher...
This work presents an analysis of the overvoltage in the secondary network caused by lightning discharges that are transferred from the primary through the transformer. Numerical simulations using TLM- Transmission Line Modeling and ATP- Alternative Transients Program are presented to show and to establish comparisons between two models for the grounding resistance of the transformer and customer:...
The impact of contacts on device and circuit performance is becoming larger with technology scaling because of higher resistance as well as increased variability. Thus, techniques are needed for measurement, analysis, and modeling of variation in contacts, and for devices, interconnects, and circuits in general, in order to ensure robust circuit design. A test chip for characterizing contact plug...
The increase in size of the silicon wafers that has been followed by the present industry makes raise the current that cells can provide. Thus, series resistance of the cells introduces a power loss that also tends to rise.
ldquoDevelopment for advanced thermoelectric conversion systemsrdquo supported by the new energy and industrial technology development organization (NEDO) has been successfully completed as one of the Japanese national energy conservation projects. Three types of the cascaded thermoelectric modules operating up to 850 K in high electrode temperature and two types of Bi-Te thermoelectric modules operating...
Multiple layer ohmic contact structures incorporating silicide materials are becoming increasingly popular in semiconductor devices. However the use of multiple layers for ohmic contacts makes the modelling and calculation of the contact resistance Rc a non-trivial problem. In this paper results from the analytical Tri-Layer Transmission Line Model (TLTLM) and a two-dimensional finite-element model...
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