The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Conventional reliability demonstration test based on statistical method is widely used in industry as it is simple and convenient to apply. But for the products with high reliability and long life, this test method fails to satisfy the demand for short cycle and low cost, and is liable to cause the phenomenon of over-test and short-test. This paper gives a step-stress accelerated sequential probability...
Reliability model is the basis for reliability assessment, prediction and optimization. Previous models always describe system reliability based on the state of each component and their relationships, which will bring high computational effort and are not feasible for large and complex systems. In this paper, a new reliability model is proposed for all-terminal reliability assessment. It is built...
Reliability of Superjunction (SJ) MOSFET is closely related to its manufacturing process. Experiments are carried out to investigate the electrical characteristics in high temperature of SJ MOSFET produced by deep trench filling technology. Filling holes are confirmed to be responsible for the performance deterioration in high temperature and the mechanism has been analyzed thoroughly.
We report the featured field electron emitter of Si tip with individually integrated nano-channel. A rational procedure was developed to fabricate the uniform integrated device. The Si nano-channel can limit both current and heat flow. The heat resistance of the nano-channel resulted in the heat accumulation at the tip apex, inducing the thermally assisted field electron emission. The negative feedback...
A phased-mission system (PMS) is usually consisting of a number of non-overlapping phases, and the phases should be completed sequentially to achieve a successful mission. In practice, imperfect fault coverage (IPC) plays an important effect on the system reliability. In this paper, stochastic multi-value (SMV) models are proposed to predict the system reliability of a multi-stated PMS consisting...
Healthcare systems in point are complex, inhomogeneous, highly variable, and require special mathematical representations. The structure function is offered for the mathematical representation of healthcare systems and its reliability evaluation is considered in this paper. Methods of system reliability evaluation based on the structure function are well established but deterministic. This restricts...
An internal paralleled active neutral point clamped converter (IP-ANPC) is presented in this paper. Advantages of the IP-ANPC converter include modularity, reliability and efficiency improvement, capability of interleaving, and better utilization of wide band-gap (WBG) devices. To simplify the operation of the IP-ANPC converter and provide an easy interleaving solution, a logic-based flying capacitor...
In this paper, we demonstrate for the first time an implant free In0.53Ga0.47As n-MOSFET that meets the reliability target for advanced technology nodes with a max operating Vov of 0.6 V. In addition, an excellent electron mobility (μeff, peak=3531 cm2/V-s), low SSlin=71 mV/dec and an EOT of 1.15 nm were obtained. We also report the scaling potential of this stack to 1nm EOT without loss of performance,...
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have the potential to increase the power density in power electronics converters compared to the currently used silicon (Si). Their benefits are higher efficiency, higher switching speeds, and higher operating temperatures. Moreover, SiC MOSFETs, which are normally-off, offer the possibility to directly replace Si Isolated-Gate-Bipolar-Transistors...
We demonstrate scaled high-Ge-content (HGC) strained SiGe pMOS FinFETs with very high short channel (SC) performance using a Replacement High-K/Metal Gate (RMG) flow, for the first time. A novel RMG gate stack process was introduced to create Ge-free interface-layer (IL) with excellent reliability and sub-threshold swing (SS) as low as 62mV/dec, the best reported to date for Si-cap-free SiGe FinFETs...
Three-dimensional (3D) ICs using TSVs are the most promising candidate for high performance and low power computing since they have lots of advantages such as short wiring length, small chip size, and small pin capacitances, as shown in Fig. 1 [1]. Until now, several kinds of 3D-ICs including image sensor chip, shared memory, and retinal prosthesis chip have been fabricated successfully.
This paper addresses the problem of choosing the right sources to solicit data from in sensing applications involving broadcast channels, such as those crowdsensing applications where sources share their observations on social media. The goal is to select sources such that expected fusion error is minimized. We assume that soliciting data from a source incurs a cost and that the cost budget is limited...
State-of-the-art silicon interposer technology of chip-on-wafer-on-substrate (CoWoS®) has been applied for the first time in fabricating high performance wafer level system-in-package (WLSiP) containing the 2nd-generation high bandwidth memory (HBM2). An ultra-large Si interposer up to 1200 mm2 made by a two-mask stitching process is used to form the basis of the 2nd-generation CoWoS® (CoWoS®-2) to...
Wireless devices are ubiquitous nowadays and, since most of them use the same unlicensed frequency bands, the high number of packet losses due to interference and collisions degrade performance. Reliability, energy consumption, and latency are key challenges for future dense networks. Allowing the transmitter to take action, i.e., vacating the channel, as soon as a collision or interference is detected...
Flexible electronics is promising for a number of emerging applications such as foldable smartphone, wearables and internet of things (IoT) [1], [2], [3]. However, the key elements of flexible electronics, the thin-film transistors (TFT), often suffer from large process variations and inferior reliability. There is also a lack of trustworthy compact models for these devices. This paper gives an overview...
The article presents the semi-Markov model of a structure “input storage device — a service device — an output storage device”. Partitioning of a plurality of states into subsets is performed describing the failure-free operation of the system to receive or deliver products. We determine the residence times of the system in states with the allowance for repeated hits using the theorem on the distribution...
Wireless sensor network is a set of independent transducers with communication infrastructure for recording and monitoring at different locations. The monitoring parameters are energy, temperature, humidity, pressure, direction and speed of the node in the WSN. The main challenges of WSN are efficiency, scalability, heterogeneity, reliability, robustness, privacy and security. Many researchers are...
Large cloud service providers often replicate data to multiple geographically distributed datacenters for availability and service quality purposes. The enormous amount of data needed to be shuffled among datacenters call for efficient schemes to maximally exploit the capacity of the inter-datacenter networks. In this paper, we propose Calantha, a new rate allocation scheme that improves the reliability...
Advanced packaging technology plays more and more important role for device miniaturization, system integration, and performance enhancement. Among many new packaging technologies, fan-out wafer level packaging (FOWLP) aroused more interests and showed the advantages of higher number of I/Os, integration flexibilities, low cost, and small form factor due to the elimination of substrate. However, FOWLP...
Embedded cooling systems have enabled higher volumetric heat removal rates at the chip and package levels, permitting advanced power electronic devices to operate closer to their inherent electrical limits. By embedding microchannels directly into the chip or substrate, higher local and global heat fluxes can be reached as the heat removal takes place in close proximity to the source. As this emerging...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.