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Deformations of metal interconnects, cracks in interlayer dielectrics and passivation layers in combination with plastic-packaging are still a major reliability concern for integrated circuit power semiconductors. In order to describe and understand the failure mechanism and its root cause, already a lot of work has been done in the past. However for the first time the impact of the edge profile of...
All market segments continue to put cost pressure on semiconductor and packaging suppliers in order to stay competitive. Taking advantage of continuing silicon innovation in fabrication process, silicon area reduction and more device functionalities increase potential die count per wafer and lower the die cost. Staying in wire bond packaging instead of migrating to flip chip packaging further provides...
In this study, three examples of failure analyses of electronic packaging by using the finite element method are presented. These are: (1) the failures (delaminations) near the interface between the filled copper and the silicon and between the copper and the silicon dioxide dielectric of the TSV of a 3D system-in-package (SiP) due to the local thermal expansion mismatch between the silicon and the...
Through-silicon vias (TSVs) have garnered a lot of interest in recent years because TSV is a key enabling technology for three dimensional (3D) integrated circuit (IC) stacking, silicon interposer technology, and advanced wafer level packaging (WLP). There has been significant effort in TSV fabrication and electrical design. However, considerably less work has been done on thermo-mechanical analysis...
A nondestructive evaluation system for detecting delamination between a chip and micro bumps in 3D-stacked structures is indispensable for highly reliable and low-cost manufacturing. In stacked structures, it is hard to inspect the adhesion condition of metallic bumps that connect a lower chip with an upper chip because most of the bumps are invisible. We have, therefore, proposed a new nondestructive...
In this paper, results of experiments and FE simulations on mechanical issues of poly-and single crystalline silicon on ultra-thin polyimide substrates are presented. Formation and propagation of cracks within the silicon and dielectric layers are then studied under controlled bending and tensile tests using bending and tensile tools being custom designed for this purpose. The results show that the...
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