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Aluminum has been widely used in integrated circuit (IC) chip interconnect As the IC feature sizes continue to shrink, the RC delay of the interconnect wire has become the main delay of the system, instead of the intrinsic gate delay. For the higher speed responsibility, the resistance of the interconnects should be reduced. Copper interconnect has become the only one option for the semiconductor...
The surfaces of optoelectronic materials such as silicon, GaAs, nitrides and oxides are known to be very difficult to bond with low melting point solders (<;300°C). Small portion of active elements (3.1~4.1wt% Ti and 0.2% Ce) added into conventional SnAg solder could improve its solderability with inorganic material surfaces. In this work, some bonding experiments using active solder containing...
In this paper, methods for high resolution analysis of the intermetallics formed in the interfaces of microelectronic packaging interconnects are discussed. The application of Transmission Electron Microscopy (TEM) in combination with energy dispersive x-ray analysis and electron diffraction for a definite identification of intermetallic compounds is compared to new approaches based on Electron Backscatter...
Barrier property, gap-fill quality, and electromigration (EM) resistance of a TaN diffusion barrier with ultrathin-Cu/Ru(Ta) liner layers were carried out to evaluate its feasibility for back-end-of-the-line Cu/low- k interconnects. Ru/TaN and Ru0.9 Ta0.1/TaN liner stacks show comparable oxidation and Cu diffusion barrier properties to the conventional Ta/TaN bilayer liner stack. Through observed...
Physical vapor deposited (PVD) Cu seed layers have been successfully implemented for Cu gap-fill in feature sizes for the 2x nm flash devices. By tuning the incident angle of the incoming flux of Cu ions as well as utilizing the resputtering parameter, the overhang, sidewall coverage and asymmetry can be well controlled to enable complete fill by subsequent electrochemical deposition (ECD). Chemical...
In this study, the nano-scale interfacial details of ultrasonic copper ball bonding to an aluminum metallization in the as-bonded states were investigated using high resolution scanning/transmission electron microscopy with energy dispersive spectroscopy. Our results showed that ultrasonic vibration swept aluminum oxide and copper oxide in some regions of contacting surface, where an approximate 20...
An independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible Vth controllability. The 4T-FinFET with a TiN metal gate is fabricated by a newly developed gate separation etching process. By appropriately controlling the Vth of the 4T-FinFET, we have successfully demonstrated...
A bonding joint between Cu metallization and evaporated Sn/In composite solder was produced at temperature lower than 200degC in air in this work. The isothermal solidification and subsequent interdiffusion of Cu and Sn/In took place along the bonding couples held at 180degC for 20 minutes. The interfacial reaction and the bonding quality is studied and evaluated. Scanning electron microscopy (SEM)...
In this paper using an electroplating technique, an Ni/Cu structure was fabricated on multicrystalline n+Si solar cells to develop an inexpensive metallization method without the degradation of the cell performance. By the application of an ultrasonic system one can obtain a film with the lower surface roughness and the higher quality. The electrical resistivity of the electroplated Ni/Cu was investigated...
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