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Palladium-doped and (Cu, Pt)-doped high reliability gold wires were used to form wire bond interconnects on aluminum IC metallization. By isothermal annealing of wire bond samples the formation of intermetallic Au–Al phases was stimulated. SEM/EBSD investigations of the phase regions exhibited significantly slower isothermal growth rates compared to a reference gold wire. Correlated TEM, STEM–EDXS...
Palladium alloyed gold wire was used to form wire bond interconnects on aluminum metallization. By isothermal annealing of wire bond samples the formation of intermetallic Au-Al phases was stimulated. Compared to pure gold wire the IMP growth in the alloyed one is retarded. Comparative EBSD investigations of the phase regions exhibited slower growth rates. By STEM-EDS measurements compounds with higher...
In this paper, the application of electron backscatter diffraction (EBSD) methods to materials used for common microelectronic interconnection technologies is demonstrated with particular emphasis to lead-free soldered interfaces and thermosonic wire bond interconnects. Here, the paper focuses on the quantitative analysis of grain orientation, grain size and grain distribution of SAC as well as gold,...
In this paper, methods for high resolution analysis of the intermetallics formed in the interfaces of microelectronic packaging interconnects are discussed. The application of Transmission Electron Microscopy (TEM) in combination with energy dispersive x-ray analysis and electron diffraction for a definite identification of intermetallic compounds is compared to new approaches based on Electron Backscatter...
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