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Copper wire has been popular in these years when facing ever-increasing gold prices. The success of large scale conversion of gold to copper wire in microelectronics could achieve successfully when all the failure mechanisms that can be discerned during reliability testing. One of these mechanisms is corrosion of the contact between the copper (Cu) ball and the aluminum (Al) bond pad, consisting of...
In recent years, Ag alloy wire has attracted great interest as a novel bonding material to replace the conventional Au wire bonding. Ag wire has the advantages of great workability, high electrical conductivity and low growth rate of intermetallic compound at bonding interface. However, in literatures, studies on mechanisms of the growth of Ag-Al intermetallic compounds and their impact on bonding...
Gold wire bonding has been widely used as the first-level interconnect in semiconductor packaging. The increase in the gold price has motivated the industry search for an alternative to the gold wire used in wire bonding and the transition to a copper wire bonding technology. Potential advantages of transition to a Cu–Al wire bond system include low cost of copper wire, lower thermal resistivity,...
Copper wire bond has been applied in industry for years and its package reliability is certainly an important subject for researchers and manufacturers. The mechanism of wire bond formation is complicated and a consensus hasn't been reached. Combination of a few theories to hypothesize the whole process of copper wire stitch bond formation on silver plating surface is elaborated in this paper. The...
In this study, palladium coated copper core wire is evaluated and a series of bond quality test is carried out on Aluminum (1.5μm Al) bond pad and Nickel Palladium (2.5μm Ni/0.3μmPd) bond pad with Ø0.6mil palladium-coated copper core wire. From the optimization with mechanical chips, it is found that NiPd has larger bond parameters windows than Al bond pad. Ball shear strength of NiPd samples becomes...
Gold wire bonding has been widely used as first-level interconnect in semiconductor packaging. The increase in the gold price has motivated the industry search for alternative to the gold wire used in wire bonding and the transition to copper wire bonding technology. Potential advantages of transition to Cu-Al wire bond system includes low cost of copper wire, lower thermal resistivity, lower electrical...
Gold wire bonding has been widely used as first-level interconnect in semiconductor packaging. The increase in the gold price has motivated the industry search for alternative to the gold wire used in wire bonding and the transition to copper wire bonding technology. Potential advantages of transition to Cu-Al wire bond system includes low cost of copper wire, lower thermal resistivity, lower electrical...
Wire bonding using bare Cu wire and Pd coated Cu (PdCu) wire has been adopted rapidly as a mainstream packaging technology as an alternative to Au wire bonding. The interfacial characteristics of both Au and Cu wire bonds are well understood as a result of extensive research. However, the interfacial feature and its evaluation in connection with Pd coated Cu wire bonds have not been investigated in...
Wire bonding technology has been widely used in the semiconductor industry for interconnection between device and substrate. Gold wire has been used in industry for many years; however with the increase in the price of gold in the past few years, copper wire has become an alternative. Copper wires have better electrical and thermal performance than gold wire. However due to coppers hardness, the bonding...
This work presents the physico-chemical behavior of several enameled copper wires systems such as PolyEsterImide (PEI)/PolyAmideImide (PAI) or PAI based multi layers compared to PolyImide (PI) which remains the basic enamel material for high temperature applications. The structural, thermal and electrical properties of these systems have been investigated before and after aging in the 200°C–400°C...
Nowadays, increasing of gold price and decreasing of dielectric let copper and low-k dielectric materials become a new technology and are increasingly chosen as preferred interconnect insulated material in semiconductor applications. In this paper, a C45 ultra low k wafer technology with bond-over-active bond pads, on a thermally enhanced BGA package with 31×31mm large body size is selected to study...
Gold wires are commonly used for wire-bonding and it fits well the industrial requirements. However, the price of Gold wires increasing significantly, Copper wires is a potential replacement for Gold due to their superior electrical and mechanical properties. In order to incorporate Cu in the wire-bonding process, substantial data regarding aging and intermetallic formation of Cu-Al bonds is required...
With SiO2 dielectric under aluminum pads, a 60 µm bond pad pitch with 52 um bond pad opening Cu wire bonding process was developed in PBGA Hip 7 PGE wafer technology. The critical factors (wire type, capillary, and bonding parameter) and critical responses (bonded ball diameter, bonded ball height, wire pull, ball shear and number of metal lift/peeling and ball lift after wire pull) are affecting...
Copper and gold ball bonds were bonded on 1.2 μm thick Al-0.5%Cu-1%Si. One set of devices was aged at 175°C up to 1000 hours. A second set of devices was pre-conditioned for 168 hours at 85°C and 85% relative humidity followed by ageing at 175°C up to 1000 hours. No cratering was found with either wire in as-bonded devices but devices bonded with copper developed cratering after ageing. Neck and stitch...
There is growing interest in Cu wire bonding for LSI interconnection due to cost savings and better electrical and mechanical properties. Conventional bare Cu bonding wires, in general, are severely limited in their use compared to Au wires. A coated Cu bonding wire (EX1) has been developed for LSI application. EX1 is a Pd-coated Cu wire to enhance the bondability. Bond reliability at a Cu wire bond...
1) In spite of the complicated ageing behaviour of wire coatings the EAP method produces results of satisfactory reliability. 2) Effect of the base metal on the thermal endurance of the coating varies very much, depending on the coating type. Whereas the effect on poly(vinyl acetal) seems to be negligible, it is very significant on AI overcoated polyester, giving to Aluminium wires 15 … 20 K higher...
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