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The present paper investigates the effect of temperature on the charging process in dielectric films of MEMS capacitive switches. The investigation includes the assessment of MIM capacitors and MEMS capacitive switches. The data analysis shows that the dielectric charging is thermally activated and the process can be described by a system with a wide distribution of relaxation times that exhibits...
MIM capacitors with MOCVD-grown RuO2 bottom electrode, ALD-grown TiO2 rutile dielectric and RuO2 and Pt top electrodes were prepared and characterised by the means of C-V and J-V measurements. Dielectric constants were in the range of 140, which correspond to EOT of 0.5 nm and leakage current density as low as 1.5*10-6 A/cm2 was achieved. Strong influence of TiO2 stoichiometry on the leakage currents...
This paper reports temperature dependant dielectric absorption measurements of SiN, Al2O3 and Ta2O5 MIM capacitors between 100Hz and 10GHz over a broad temperature range. The SiN dielectric clearly shows a temperature dependent dielectric absorption whereas for Al2O3 and Ta2O5 the effect is nearly temperature independent. A model is proposed for the 3 dielectric materials which takes into account...
Electrical characterization of various capacitors and resistors on PEI and PET substrates is performed. The resistive inks with various nominal sheet resistances have been used. Capacitor was made using BaTiO3 dielectric layer. The screen printing process is used to manufacture the resistors and capacitors according to the recommendations of manufacture parameters. The effects of different resistor...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials...
In this study, conduction asymmetry is analyzed using asymmetric stacks in order to appreciate the cathode role. Then original test structures are used to highlight fringe leakage and to model asymmetry in a pure Ta2O5 capacitor for both surface and peripheral currents. Finally, the impact of peripheral on self-heating and consequently on reliability parameters is deeply investigated. Important information...
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