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We have investigated dynamic characteristics of ferroelectric Hf02 (FE-Hf02) by considering multiple domain (MD) and linear domain-domain interaction. By using the calibrated MD model, experimental dynamic responses of FE-HfO2 can precisely reproduced, for the first time. Input voltage amplitude (Vin) and external resistance (R) dependences of dynamic responses in FE-Hfö2 revealed that dynamic term...
We have investigated dynamic characteristics of ferroelectric Hf02 (FE-HfÓ2) by considering multiple domain (MD) and linear domain-domain interaction. By using the calibrated MD model, experimental dynamic responses of FE-HfO2 can precisely reproduced, for the first time. Input voltage amplitude (Vin) and external resistance (R) dependences of dynamic responses in FE-HfO2 revealed that dynamic term...
In modern CMOS processes, several non-ideal influences affect the functionality of integrated circuits. In order to analyze and reduce these influences, time intensive circuit simulations are performed at transistor level. Although numerous non-idealities are considered in such simulations, they cannot be analyzed separately since they are inherent parts of the transistor models and cannot be faded...
DC-DC power converters based on switched capacitor circuits are widely used to realize different power supply domains in SOC chips. They can be classified as Analog Mixed Signal circuits. Current approaches to their verification is primarily based on simulating their transistor level netlist in circuit simulators. In this paper an approach to formally verify them using simulation traces is proposed,...
A symbolic macromodel for slew and settling characterization of fully differential switched-capacitor (SC) integrators is proposed in this work. This model is intended for fast behavioral simulation of data converters in the time-domain. The main advantages of the proposed model are: 1) it can be created automatically without the need of running a transient simulation; 2) it is fully composed of circuit...
In recent years, the switching speed is increased accelerately. And, the increase of EMI by high dv/dt is a problem. In this paper, the Tri-phase 400 Vrms inverter for system interconnections which used SiC-JFET is analyzed. And, it is shown that noise terminal voltage is analyzable with an error of ±15 dB by highly precise modeling.
Volterra analysis of the ultra high-speed CMOS switched source follower (SSF) track and hold amplifier (THA) is presented based on a simplified RF model. Approximate expressions for the transfer function, the harmonic equations and third-order intermodulation distortion equation are derived respectively. Simulations based on a commercial available 65 nm CMOS process technology are performed with the...
An on-chip buck converter with 3D chip stacking is proposed and the operation is experimentally verified. The manufactured converter achieves a maximum power efficiency of 62% for an output current of 70mA with a switching frequency of 200MHz and a 2x2mm on-chip LC output filter in 0.35mum CMOS. The use of glass epoxy interposer to increase the maximum power efficiency up to 71.3%, and the power efficiency...
This paper describes a comparative analysis between two topologies of operational amplifiers to design a 40 MS/s 12-bit pipeline analog to digital converter (ADC). The analysis includes AC and transient simulation to select the proper topology. This ADC is implemented in a 0.35 mum AMS CMOS technology with 3.3 V single power supply. The capacitors and selected operational amplifiers were scaled for...
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