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We present a comprehensive study of electro-optical frequency mapping (EOFM) and probing (EOP) on NAND and NAND-like structures with different sizes. Our main objective was to find out, if it is possible to detect single dysfunctional transistors in a NAND structure smaller than the laser spot just by means of the optical signal. We further investigate the impact of parasitic laser voltage signals...
In this paper, we present three cases studies with dedicated FIB-TEM technique that developed to characterize each of them. The first case describes a FIB sample preparation method that can include two columns of the structure of interest into one sample. It is a useful technique to characterize the overlay offset when more than one column of the structures is concerned. The second case is about to...
To realize higher spatial resolution than conventional SEM-based nano-probing system, a novel Electron Beam Absorbed Current imaging system was newly developed using a Hitachi HD-2700 200 kV dedicated STEM. Its specimen holder accommodates a mechanical probe for current detection and TEM grid specimen. This holder also has a micrometer-based coarse positioning and piezoelectric-elements-based fine...
In semiconductor manufacturing for automotive as for many other industries, reliability tests are designed and implemented in order to predict failure rate in real life and applications. Physics-of-failure is used on the rejects observed in field and during the reliability tests to check them to stress the components as in life applications. Besides this qualitative study between field and reliability...
ESD protection design for the RF transmit/receive switch (T/R switch) with embedded silicon-controlled rectifier (SCR) is proposed, where the SCR device is embedded in the ESD diode and the transistors of T/R switch by layout skill. Silicon chip verified in a 90-nm CMOS process has been measured by TLP and HBM ESD test to confirm its efficiency for ESD protection. The parasitic capacitance from the...
As a key part of failure analysis function in semiconductor foundry industry, TEM micro-topography becomes more and more important while semiconductor devices' critical dimensions get smaller and smaller. And the FIB/TEM sample preparation technique takes the first priority to achieve high quality TEM pictures. Normally FIB operators have to avoid sample defects such as sample bending, poor thickness...
Conventionally, post-temperature cycling reliability tests, polyimide based Print Circuit Board (PCB) offer better solder ball joint reliability than FR4 based PCB. This paper illustrates that for FR4 materials, by applying suitable PCB stack & solder mask design, 1.5 to 2X increase in solder ball joint reliability can be achieved. Reliability improvement is supported by correlation of theoretical...
This work discusses visible light laser voltage probing (VIS-LVP) and gallium phosphide solid immersion lens (GaP SIL) research for Integrated Circuit (IC) analysis at Technische Universität Berlin. An overview of the challenges in connection with the ultra-precision fabrication of GaP SILs and their application is given. The use of visible light is not only opening a path for fault isolation in small...
The continuous scaling of device dimension and the introduction of FinFET technology has led to new reliability concerns, such as Bias Temperature Instability (BTI), Stress-Induced Leakage Current (SILC), Self-Heat Effect (SHE) and Time Dependent Junction degradation (TDJD). These reliability issues become process and design bottle neck for the advanced technology development because of their stringent...
Copper — Aluminum (Cu-Al) Intermetallic Compound (IMC) is an important physical measurement reference for both wire bondability and product reliability. Most common methodologies for IMC measurement are approaching by vertical direction cross section analysis or chemical solution etching off Cu bonded ball for IMC coverage at the ball bonded area. Moreover, chemical solution etching for IMC measurement...
Modeling the negative bias temperature instability (NBTI) can optimize circuit design. Several models have been proposed and all of them can fit test data well. These models are extracted typically by fitting short accelerated stress data. Their capability to predict NBTI aging outside the test range has not been fully demonstrated. This predictive capability for long term aging under low operation...
In this paper, we delve into one of the most relevant defects-related phenomena causing failures in the operation of modern nanoscale electron devices, namely Random Telegraph Noise (RTN). Due to its detrimental impact on devices and circuits performances, RTN mechanism must be thoroughly understood, which requires establishing a self-consistent framework encompassing automated measurement techniques,...
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