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A previous study on long term reproducibility [1] demonstrated that CAMECA Wf can delivered the relative standard deviation (RSD) of the relative sensitivity factors (RSF) of boron (B) are typically 3.7%. Above results show that deviation can be estimated without testing the standards. This paper will demonstrate that the SIMS RSD depend significantly on the species concentration.
A surface layer formation by Cs+ bombardment was observed during ultra-thin oxynitride gate dielectrics depth profiling. A significant thickness change relative to ultra-thin layer of oxynitride was noticed when testing a bombarded sample after a period of time. Cs, O and N depth profiles were examined by Dynamic Secondary Ion Mass Spectrometry (DSIMS). The bombarded sample and new sample were investigated...
Large-tilt angle (LTA) implantation has been employed in Si manufacturing processes in many applications, such as lightly-doped drain and Halo Implant. The depth profile of implant ions usually consists of only single peak at incident angle of zero degree with respect to the perpendicular of the silicon surface. However, an abnormal dual-peak profile was observed at LTA (>40 degree) for both boron...
In this paper, we present a study on protective coating techniques for thin film X-TEM sample preparation. The study shows that proper choice of the protective layer before FIB cross section is a crucial step to maintain the film profile and make sure the accuracy of the thickness measurement. Silicon native oxide is used as the target sample. We have investigated PECS metal sputtering followed by...
Electrochemical migration (ECM) pose a high reliability risk to semiconductor devices. In this study, an ECM caused electrical failure case detail was shared, relevant electrical failure & ECM mechanism was also analyzed. To verify the failure mechanism discussed in this paper, ECM process was simulated on the same chip substrate. Besides, for the first time, the effect of chloride ion concentration...
Single Event Effects (SEE) in a stand-alone 1T1R Resistive Random Access Memory (RRAM) are experimentally demonstrated by using pulsed laser irradiation. No bit errors are observed in the RRAM array at an equivalent LET of more than 100 MeV.cm2/mg, indicating that the RRAM memory cells are robust against SEE. The most sensitive regions are the row decoders of the peripheral circuit, with a threshold...
Time-of-flight Secondary Ion Mass Spectrometry is a well-known surface analysis technique for surface trace level contaminants due to the strength of ultra-high surface sensitivity. However, the mass spectral interpretation for useful information from thousands of elemental and molecular ions is complicated. In this paper, a simpler but effective way for the case study analysis of surface contaminant...
The performances of 4H-SiC power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with defects induced by cosmic radiations are studied in this paper. By SRIM and SILVACO T-CAD simulations, the radiation effects on the electrical parameters of the device are observed. The results indicate that the radiations from different directions induce defects in different regions of the device. The...
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