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Reliability of Superjunction (SJ) MOSFET is closely related to its manufacturing process. Experiments are carried out to investigate the electrical characteristics in high temperature of SJ MOSFET produced by deep trench filling technology. Filling holes are confirmed to be responsible for the performance deterioration in high temperature and the mechanism has been analyzed thoroughly.
In this paper, we performed accelerated degradation testing (ADT) of a certain type of driver IC under different humidity stress levels. We keep the drivers in storage under same temperature but different humidity; measure the determined sensitive parameter of the driver with fixed time interval, then model the degradation path to obtain the pseudo-failure lifetime. Finally, we analyze the test data...
RF Power amplifier often demands Zero-defect in application. However, it sees non-uniform stress during application. The time depend stress level depends on the input signals. This paper presents a way to predict the gate oxide lifetime, not only for the intrinsic oxide breakdown, but also for the extrinsic oxide breakdown. An appropriate gate oxide screening condition would enable the desired quality...
An investigation of radiated reliability of HBT and MOSFET which fabricated on 0.35 μm SiGe BiCMOS technology is presented under dose rates of 500 mGy(Si)/s and 1 mGy(Si)/s with a 60Co γ irradiation source. Gummel characteristics of SiGe HBT and transfer characteristics of MOSFET are measured before and after irradiation. Base current (IB), leakage current (IOFF) and threshold voltage (VTH) are extracted...
This study investigates the bias temperature instability in high-k/metal-gate pMOSFETs with a TiN barrier layer sandwiched between the metal gate electrode and HfO2 dielectric and for reliability improvement of such devices. The experimental results clearly demonstrated that the diffusion mechanism of oxygen and nitrogen resulting from the post metallization treatment was the root cause of bias temperature...
In this study, we found that inappropriate TU (top Cu metal line) geometry design induced product reliability failures issue. The TU geometry, having poor compatibility with wafer test probe issue, couldn't withstand the stress of wafer test probe resulting in fractures. Due to the inappropriate TU geometry design had major disadvantages in circuits characteristics. Reliability estimations exhibited...
As the applications of micro electronic mechanical system (MEMS) are booming, more and more research and development activities are involved in the MEMS industry. For every new MEMS product with new functions, the manufacturing process will be tailored to cope with the changes. This requires reliability work to ensure the robustness of the new process. Thus, failure analysis plays an important role...
In this paper, a new and simple method named Weibull criterion is proposed to identify whether metastable states occur in single random telegraph noise (RTN), which has been verified by both simulation and experiment results. It is helpful for comprehensive understanding of trap properties and providing a direct evidence of oxide traps with multiple states.
The solder points cracking of a component with package of ceramic ball grid array (CBGA) type is studied in the paper. The cracking cause is found and the failure mechanism is clarified. The weakness of the package structure design is demonstrated by comparing the experiment results of two kinds of components, which provides guidance for the reliable design and application.
In this paper, it is reported for the first time that, in nanoscale high-k/metal-gate MOSFETs, the hot carrier degradation (HCD) follows a two-stage law in some stress conditions. Both interface traps and oxide traps contribute to HCD causing its time-dependence varies with different stress modes. The results are helpful for the physical understanding of HCD in nanoscale devices.
The combined benefits of reduced package footprint, higher input/output capability, better power and ground distribution and reduced signal inductance has made the flip chip package technology a primary packaging solution for portable consumer electronics as well as commercial/industrial applications. The technology qualification step ensures the highest quality and reliability performance on devices...
In this paper, the influences of sandwiched structure trench on the latch-up reliability of the LIGBT with thick SOI substrate are investigated. Based on the influence mechanisms, a novel device structure with trench grounded is proposed, which can enhance the latch-up voltage by 24% with the other performance maintained. Further studies illustrate that the latch-up voltage would decrease dramatically...
Large scale and high density packaging of ASICs are usually achieved by FCBGA forms. The structure and materials are more complicated in FCBGA, which would cause reliability concerns in situations where thermo-mechanical stressing is dominant. Accelerated temperature cycling reliability test was performed on 90-nm/8-level copper based FCBGA packaging devices, and open failures dominated by thermo-mechanical...
In this paper, an improved LDPMOS_SCR without a LDPMOS structure (NonLDPMOS_SCR) is discussed, which is realized in 0.5-μm 5V/18V/24V CDMOS process. The theoretical analysis and transmission line pulse (TLP) testing system are used to predict and characterize the proposed ESD protection devices. According to the measurement results, compared with the normal LDPMOS_SCR, NonLDPMOS_SCR elevates the second...
Contamination and Electrical Overstress are typical failure modes that may appear in failed devices. However, the clean exposure and excellent preservation of such failure sites is often found challenging or even impossible due to the limitations of the decapsulation techniques and tools available. The accuracy of failure analysis can be jeopardized during decapsulation due to the introduction of...
In semiconductor manufacturing for automotive as for many other industries, reliability tests are designed and implemented in order to predict failure rate in real life and applications. Physics-of-failure is used on the rejects observed in field and during the reliability tests to check them to stress the components as in life applications. Besides this qualitative study between field and reliability...
Conventionally, post-temperature cycling reliability tests, polyimide based Print Circuit Board (PCB) offer better solder ball joint reliability than FR4 based PCB. This paper illustrates that for FR4 materials, by applying suitable PCB stack & solder mask design, 1.5 to 2X increase in solder ball joint reliability can be achieved. Reliability improvement is supported by correlation of theoretical...
Copper — Aluminum (Cu-Al) Intermetallic Compound (IMC) is an important physical measurement reference for both wire bondability and product reliability. Most common methodologies for IMC measurement are approaching by vertical direction cross section analysis or chemical solution etching off Cu bonded ball for IMC coverage at the ball bonded area. Moreover, chemical solution etching for IMC measurement...
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