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There is an ongoing demand for increased power density and efficiency along with lower costs of converter systems and shorter development time for specific applications in the field of power electronics. In order to expedite the technology development Google and IEEE initiated the Google Little Box Challenge (GLBC) including $1 million prize money. Aim of the GLBC was to build the worldwide smallest...
In this work, static and dynamic characteristics of an AlGaN/GaN-on-Si power field-effect transistor (FET) with the integrated photonic-ohmic drain (POD) were systematically investigated. With the photon generation and channel current inherently switched ON and OFF in synchronization, dynamic performances (e.g. dynamic ON-resistance) of the PODFET can be significantly enhanced owing to photon pumping...
A silicon carbide split-gate MOSFET (SG-MOSFET) is proposed in this paper, which features a Schottky barrier diode embedded above the JFET region between the split gates. Therefore, the proposed SG-MOSFET boasts a unipolar reverse conduction path with low turn-on voltage. Additionally, the gate-to-drain charge in the proposed device is greatly reduced, owing to the presence of the Schottky anode that...
In recent years, several groups have experimentally demonstrated both n-channel and p-channel 4H-SiC IGBTs for ultra-high voltage applications. In this paper, numerical simulations have been used to quantify the on-state and switching performance tradeoffs for UHV n- and p-IGBTs with non-punch-through and field-stop design. The smaller gain of the wide base transistor in an n-IGBT leads to faster...
Renewable and other distributed energy resources feed electricity to the utility grid and/or local loads through interfacing power electronic converters. These new microgrids are susceptible to short circuit faults, mandating the use of protective circuit breakers. Solid state circuit breakers (SSCB) are needed due to their much faster response than mechanical circuit breakers. This unique application...
3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a hybrid half-bridge in a 3D packaging configuration, dedicated for high voltage application. A dynamic electrical test of the package is presented.
In this work we present the simulation and experimental results of the “Cross Switch (XS)-Hybrid” built with 3.3kV Si-IGBTs and SiC-MOSFETs. We have analyzed the switching performance, mainly the turn-off behavior of the XS-Hybrid (a parallel arrangement of a Si-IGBT and a SiC-MOSFET) with the aid of Sentaurus TCAD device simulations. We discuss in detail the current sharing mechanism between these...
This paper demonstrates a new type of bidirectional switch in a CMOS technology. The key feature of the device is a shared channel, which offers a significant (up to 40%) reduction in on-resistance compared to conventional implementations that combine two single asymmetrical devices, while maintaining a similar breakdown and reliability.
GaN Cascode performance optimization for high efficient power applications is presented in this paper. Analytical equations of Cascode capacitance network (Ciss, Coss, Cgd) is demonstrated and the equations accuracy is verified through experimental measurement. Analysis shows that Cascode Cgd is determined by HV D-MISFETs Cds, LV Si FETs Cgd/Coss ratio, and extra zener diode capacitance. With low...
In this work, we revealed the impacts of Vth shift on Ron in enhancement-/depletion-mode (E/D-mode) GaN transistors under dynamic AC (1 k-1 MHz) stress. With newly developed fast dynamic characterization techniques, we achieved data acquisition within 120 ns after each stress pulse throughout the entire stress time ranging from 10−7 s up to 103 s. Vth shift and the consequent Ron increase under dynamic...
In this paper, we report a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for GaN high electron mobility transistors (HEMTs)] including a capacitance model, which accurately captures the contributions originating from the device's field plate (FP) structure. The capabilities of the reported model are demonstrated by reproduction of the measured power efficiency of...
The authors developed 3 kV 4H-SÍC reverse blocking (RB) metal-oxide-semiconductor field-effect transistors (MOSFETs) for the first time. To achieve reverse blocking capability, the n+-substrate layer was removed by polishing, and both a Schottky contact and edge-termination structure were introduced onto the wafer backside. Fabricated SiC RB MOSFETs exhibited good Schottky characteristics, and measured...
650V superjunction IGBTs have been fabricated. Depending on IGBT structures as well as process conditions, competitive trade-off performances have been observed. Vcesat of 1.4V and tf around 35 ns at the collector current density of 250A/cm2 were obtained with the prototype of superjunction FS IGBT. The superjunction NPT IGBT also shows tf of 35ns with Vcesat of 1.9V, which is superior to the conventional...
In this paper, a IGBT with Shallow P-well region at the emitter side (SP-IGBT) is proposed and compared with the Injection Enhanced Gate control Transistor (IEGT). The proposed SP-IGBT structure features that there are numerous shallow p-wells locate between the segmented p-body regions. Meanwhile, the shallow p-wells are covered by the planar poly gate. As a consequence, there exist many parasitic...
In this paper, the EMI (Electro-Magnetic Interference) noise caused by the switching of the Superjunction DMOS in the flyback converter system is investigated. It is found that the radiation noise during the turn-on process is more severe than that during the turn-off process, and the turn-on behavior is not just affected by the CGS (gate source capacitance) and RG (gate driving resistance). To prove...
Hydrogen-related donors can be formed by using only a moderate thermal budget, so that this process can be used to create field-stop layers in thin power devices. The electrical characteristics of 1200 V IGBTs and diodes provided with such field-stop layers are presented and compared with the characteristics of conventionally processed devices. Moreover, tailoring the field-stop distribution by multi-energy...
Two different diode technology concepts are compared with respect to cosmic radiation hardness and electrical performance [1]. Ion irradiation experiments reveal that diodes with highly doped and deeply diffused pn-junctions can survive cosmic radiation induced streamer events, explaining the observed extraordinary high cosmic radiation hardness. The electrical performance of these diodes is found...
A new 60 V rating split gate trench MOSFET fabricated with the state-of-the-art process technology has been investigated and evaluated in the secondary synchronous rectifier board. It shows the best-in-class specific resistance of 10.9 mΩ·mm2 and the figure-of-merit (FOM) of 85 mΩ·nC which is the product of the on-resistance and the gate charge.
This paper presents a new high voltage analog switch IC for ultrasound imaging system. Compact analog switch IC that doesn't need dedicated high voltage power supplies is strongly required because it can contribute to reducing size and cost of ultrasound imaging system. To satisfy above requirements, we propose a new floating gate driving circuit and a new switch circuit. To reduce die size of IC,...
Novel gate driver ICs for the control of 1200V SiC-JFET and -MOSFET half bridges based on high voltage silicon on insulator (SOI) technology are presented. The driver ICs features an extended gate voltage range of 20V and due to an innovative level shifter concept the output voltage levels for turn-off and turn-on can be changed in a wide voltage range between −20V…0V and 0V…+20V. The two dies of...
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