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High temperature operation of a quantum dot laser integrated with a silicon waveguide on a SOI wafer was demonstrated for the first time. Up to 100°C temperature, output power sufficiently high to achieve an optical error free link was obtained.
We demonstrate error-free wavelength conversion of 16-QAM 28-GBaud (112 Gb/s) signals and 1-to-6 wavelength multicasting of 16-QAM 22-GBaud (6×88 Gb/s) signals based on four wave mixing in a dispersion engineered silicon nanowire.
We demonstrate an efficient guided-mode resonant color filter array. It consists of a thin subwavelength silicon nitride grating and a homogeneous silicon nitride waveguide on a glass substrate. The fabricated device exhibits high experimental efficiencies.
We demonstrate the first monocrystalline germanium gate photoMOSFET integrated with silicon photonic waveguides and grating coupler. We measure a responsivity of 1.2 A/W at 1550nm with a 2×4 µm2 germanium gate.
An eigenmode expansion method is used to model and optimize optical couplers between SOI waveguides and Ge/SiGe devices. Electroabsorption modulator performances are estimated in term of extinction ratio and insertion losses.
We present an ultra-compact optical diode using nonlinear second-order silicon microring resonator which is complementary metal-oxide semiconductor (CMOS) compatible. The designed optical diode features high isolation (>20 dB) and more tolerant resonance wavelength mismatch (+/−0.35 nm with <1.5 dB isolation degradation).
Heterogeneous integration enables all the elements of photonic systems to be fabricated on a single chip with silicon foundries allowing circuits to meet the complexity, and cost requirements of the next generation of communication systems.
We present a GaSb-VCSEL concept using SOI-based HCGs as highly reflective mirrors. The optical properties of two different grating designs are simulated using RCWA. These gratings show strong and broadband reflection around 2.3 µm.
We propose a hybrid silicon laser and photodetector system that can emulate the electro-physiological behavior of a real neuron at ultrafast time-scales. Networks of lasers would scale up easily using a silicon III–V wafer-bonding platform.
InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.
The design and characterization of a silicon-on-insulator planar concave grating based (de)multiplexer operating at 3.8µm is reported. Low insertion loss (≈1.6dB) and good crosstalk characteristics (≈19dB) are demonstrated.
In this paper we describe Ge-on-Si waveguides and Mach-Zehnder interferometers operating in the 5.2 – 5.4 µm wavelength range. 3dB/cm waveguide losses and Mach-Zehnder interferometers with 20dB extinction ratio are presented.
In this paper we discuss design and optimization specifics of composite IIIV/Si waveguide gratings with 2D sub-micron optical confinement, as applied to DFB lasers. Specifically we calculate the coupling coefficient, measure and compare the theoretical and experimental results.
We report on a nearly 8-fold increase in multi-hole defect photonic crystal biosensor response by incorporating insitu synthesis of DNA probes, as compared to the conventional functionalization method employing pre-synthesized DNA probe immobilization.
LED micro-displays offer diverse applications with their superior characteristics and unique performance, particularly in high light utilization efficiency (LUE), design simplicity (Backlight Unit (BLU)-free), long lifetime, and excellent visibility under bright day-light. Several LED based displays have been developed in recent years using both passive matrix (PM) and active matrix (AM) programming...
We report the fabrication of a mechanically-flexible 16×16 array of thin-film, micron-size LEDs emitting at 480 nm. Devices were transfer-printed onto a mechanically-flexible ITO backplane using a modified, high-precision (placement accuracy ±25 nm) assembly system.
Experimental demonstrations of ring resonators with TiO2 cores are presented and measured with −2.9pm/K resonance shift. Their thermo-stress-optic behavior was found to be important to their function; therefore an inclusive model is presented and simulated numerically.
High-Q performance in microcavities relies upon use of low absorption dielectrics and creation of smooth dielectric interfaces. For chip-compatible devices, silica has the lowest intrinsic material loss [1]. Microtoroid resonators combine this low material loss with a reflow technique in which surface tension is used to smooth lithographic and etch-related blemishes [2]. At the same time, reflow smoothing...
We demonstrate the transverse-mode control of 980nm VCSELs using highly angular dependent HCG mirrors. The fabricated a-Si HCG clearly shows the large angular dependence of reflectivity, which enables single transverse-mode operations of large-area VCSELs.
We present the lowest energy per bit operation of a hybrid integrated light source on a silicon chip for optical interconnection considering wall-plug efficiency of a laser diode (LD). We investigated a multi-channel configuration for low power operation of light sources on a silicon substrate in a photonics-electronics convergence system. We confirmed that lower power consumption per channel can...
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