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High temperature operation of a quantum dot laser integrated with a silicon waveguide on a SOI wafer was demonstrated for the first time. Up to 100°C temperature, output power sufficiently high to achieve an optical error free link was obtained.
An eigenmode expansion method is used to model and optimize optical couplers between SOI waveguides and Ge/SiGe devices. Electroabsorption modulator performances are estimated in term of extinction ratio and insertion losses.
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