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The Y-doped ZnO nanocrystalline films were deposited on the glass substrates by sol-gel method. X-ray diffraction measurements of the films showed the same wurtzite hexagonal structure and preferential orientation along the c-axis. The grain size of the ZnO films was decreased by the doping of Y. Temperature dependence resistivity showed a semiconductor transport behavior for the nanocrystalline films...
Bi1−xPrxFe0.95Mn0.05O3 (BPFMO) thin films were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates by spin coating with a sol-gel technology and rapid thermal annealing. The effects of Pr content on the microstructure, magnetic and multiferroic properties of thin films were investigated. The result of X-ray diffraction analysis shows that the BPFMO thin films have rhombohedral-to-tetragonal...
A low damage CF4 plasma with a filter in a PECVD system was proposed to incorporate fluorine atoms into an HfO2 sensing membrane in an EIS structure for K+ ion sensor application. The highest sensitivities of 82mV/pK was obtained when the low damage plasma treatment with RF power of 100W was used for 30min. Compared with the conventional CF4 plasma, the sensitivity significantly improved. The reasons...
In this paper, we proposed a simulation approach for studying the random dopant fluctuation (RDF) effects in the nanoscale MOSFETs using only the TCAD tools. We use this approach to simulate the RDF effects in the 20-nm gate-length bulk MOSFETs, silicon-on-insulator (SOI) single-gate (SG) and triple-gate (TG) FinFETs for demonstration. This approach utilizes the stochastic nature of the Monte Carlo...
Variability impact of random dopant fluctuation in nanometer-scale silicon nanowire MOSFET is assessed via TCAD numerical simulations. We have simulated ensembles of 629 devices, which differ from each other due to the physical manifestation of the dopant variability in the channel location, including the detailed microscopic pattern of a discrete sphere dopant from drain to source. Based on our study,...
The embedded SiGe source/drain stressor helpful to promote the drive current involves etching out the source/drain silicon and replacing it with SiGe filler. This process uses the lattice mismatch between silicon and germanium atoms making the silicon channel compressive. This compressive stress enhances hole mobility, and the pMOSFET performance can be enhanced. In this study, the characteristics...
Cu-doped ZnO nanoparticles were synthesized by co-precipitation method using zinc nitrate (Zn(NO3)2-6H2O), copper(II) nitrate trihydrate (Cu(NO3)2-3 H2O) as starting precursors for Zn and Cu sources, respectively. The structural properties of powders were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and X-ray Photoelectron Spectroscopy (XPS). The XRD...
The hybrid carbon nanostructures composed of an array of vertically aligned carbon nanotubes (CNTs) and a self-organized planar graphite layer (PGL) located on the top of the array (CNT-PGL nanostructures) have been obtained by the CVD method with the volatile catalyst. The fundamental characteristics (morphology, elemental composition and structure) of these nanostructures were characterized by Scanning...
We demonstrate synthesis of large area graphene on a metal (Ni and Cu) foil by the thermal chemical vapor deposition (CVD) process using the solid camphor (C10H16O) as a carbon source. The graphene growth process on a polycrystalline metal foil significantly influence by the gas composition and quantity of solid precursor. Synthesis of high quality continuous graphene film is achieved in the developed...
Nanolithography of graphene surfaces using scanning probe microscopy (SPM) scratching with a diamond-coated tip was systematically investigated. The graphene films were obtained by mechanical exfoliation of pyrolytic graphite sheet (PGS). The groove size increased linearly with the applied force. Furthermore, there were no effects of scan speed and scratch angle on the groove size. These results imply...
This work presents a flexible carbon based memory with the Al/graphene oxide (GO)/ITO structure fabricated at room temperature. The Al/GO/ITO devices show the unipolar resistive switching behavior with the resistance ratio to over 30, and sustain over 250 cycling without any resistance window closure. However, the retention fails due to the resistance increase of low resistance state (LRS). The mechanisms...
A wearable electronic nose (e-nose) has been developed by integrating a low cost chemical sensor array with a wireless communication for applications in healthcare. Its sensing unit was fabricated by a fully inkjet-printing technique, comprising eight different sensor elements manufactured by varying printing patterns and sensing materials. These sensors have shown response to a wide variety of complex...
In this paper, feasibility of using pseudo-rigid-body modeling technique in examined on a simple modular compliant mechanism. A mathematical model is constructed to determine the non-linear behavior of large-deflections. The problem is solved using an iterative method. The solution to the non-linear model is then compared to empirical results collected from a mock-up of the compliant device. The pseudo-rigid-body...
Doped semiconductor nanocrystals offer great potential for microelectronics and integrated optoelectronics. Nanocrystal based technology is promising for several fields of technology such as thin conducting films, light emitting devices, tunable lasers, transistors, photovoltaics, and less harmful alternatives to toxic fluorescent dyes for application in bio-imaging, to name a few. While properties...
In this paper, we demonstrate gadolinium oxide RRAM with nitrogen plasma immersion ion implantation (PIII) treatment technique at first time. For nitrogen plasma treatment, the nitrogen ions were incorporated with gadolinium oxide. We controlled the implantation voltage that the nitrogen ions exist near the surface of gadolinium oxide and it was forming a GdxOyNz layer. This can reduce the leakage...
In this paper, bipolar resistive switching was investigated in our fabricated Ti/Si3N4/p+-Si resistive random access memory (RRAM) devices. Heavily doped p-type Si was used instead of a conventional bottom electrode (BE) using metal such as Pt. We found that forming-free process, self-compliance and gradual reset were shown in this device. The operation voltage was with 1.8∼3.5 V during set process...
The dependency of the RRAM device electrical parameters such as set voltage, reset current and resistance on the RRAM cell dimensional scalability is investigated with Monte Carlo simulation to optimize the power consumption of bipolar RRAM. It is found in the simulation that the switching process in bipolar RRAM is related to the cell dimension in the sub-nm region in terms of its horizontal length...
To reduce sneak currents in high density non-volatile Bipolar RRAM technology the bipolar selector diode with high on-current density and larger on-off current ratio is required. Recently, we have experimentally demonstrated an n+/p/n+ stack based epitaxial Si punch-through diode for selector application with excellent TCAD matching. This selector technology provides flexibility in on-voltage (Von...
We propose a new fabrication method for nanofluidic device with novel shapes using thermal shadow evaporation and wet anisotropic etching in aqueous KOH solution. The shadow evaporation of metal onto the sidewalls of topographic features, followed by the selective etching of the substrate, generates narrow channel structures with nanometer scales. And the wet anisotropic etching of silicon substrate...
An original top-down process involving a bio-template and damage-free neutral beam etching (NBE) has been developed to fabricate a high-quality nanodisk superlattice. The self-assemble ferritin 2D array (iron core diameter: 4.5 nm) acts as uniform etching mask and our developed neutral beam etching eliminates UV photons and high-energy charged particles to achieve a damage-free etching. As a result,...
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