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V2O5/TiO2 nanocomposites were synthesized via sonochemical and hydrothermal process. At first, titanium dioxide (TiO2) nanopowders were synthesized by sonochemical process using titanium isopropoxide as a titanium source. Meanwhile, hydrothermal process was carried out to modify the structure of commercial V2O5 powder to be nanorod-like structure V2O5 with increasing specific surface area. Structural...
The Capacitance-Voltage (CV) characteristics of InGaSb based n-MOSFET are investigated by quantum mechanical calculation solving 1D self-consistent Schrodinger-Poisson equation using Silvaco's ATLAS device simulation package. The charge density profile is determined by wave function penetration effect within the oxide layer and Neuman boundary condition. Low and high frequency CV characteristics are...
The growth of single crystal CuO nanowires by thermal annealing of copper thin films deposited by DC magnetron sputtering is studied. We show that by tuning the morphology and structure of the sputtered copper thin films, the density, length, and diameter of the CuO nanowires can be controlled accurately.
In this paper, we have grown self-assembled GaSb quantum dots (QDs) on GaAs (100) substrate by liquid phase epitaxy (LPE) technique. The surface morphology, density and size distribution of GaSb QDs are investigated by High-Resolution Scanning Electron Microscope and Atomic Force Microscopy, respectively. Cross-sectional transmission electron microscopy is employed to obtain a cross sectional image...
This paper presents an in-depth analysis of Cd0.4Zn0.6O/ZnO multiple quantum well light emitting diode (LED) using commercial simulation software and experimentally optimized growth conditions of n-type ZnO on Si (001) substrate by dual ion beam sputtering deposition (DIBSD) system. Theoretical study reveals an internal quantum efficiency −93.5% is achieved at room temperature from the device, emitting...
In this paper we have studied both DC size effect and anomalous skin effect caused by surface and grain boundary scattering on the resistivity of Cu thin films by a Monte Carlo method. Contribution of each scattering mechanism and the interaction between them are analyzed separately. A simple and fast numerical recursive method is also introduced to guess the structure of electric field and distribution...
We report the conduction mechanism of the single-electron transistors (SETs) fabricated by field-emission-induced electromigration, which is so-called “activation”. By applying the activation to Ni nanogaps, we were easily able to fabricate the SETs operating at room temperature. Additionally, strong Coulomb staircases were clearly obtained, and the quasi-periodic current oscillations were also observed...
We report the magnetic properties, microstructure and surface morphology of epitaxially grown Fe2CrSi films. Highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400oC. Magnetic tunnel junctions using Fe2CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe2CrSi at the interface with MgO. An enhancement of...
We report a unidirectional bipolar resistive switching in an n-type GaOx/p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn...
A nonvolatile memory based on ink-jet printed In-Ga-Zn oxide (IGZO) thin film transistor with bottom gate bottom contact architecture is reported. The memory device contains SiO2 gate dielectric layer embedded with silicon nanocrystals, which act as charge trapping sites. Memory effects were observed by a clockwise loop in Vgs-Id curves, which is attributed to the charging and discharging of the silicon...
We investigate the device performance of III-V ultra-thin-body field-effect transistors with the consideration of the effects of materials, body thickness and dielectric effect based on the top-of-barrier model. These three major factors predominate the transport performance in double-gate ultra-thin-body MOSFET for the same transport and surface orientation. Firstly, we observe that among these selected...
Fully CMOS compatible vertical nanopillar GAA transistor integrated with Oxide based RRAM cell to realize 4F2 footprint has been demonstrated and systematically characterized. Nanopillar transistor exhibits excellent transfer characteristics with diameter down to a few tens nanometer. Three type of resistive switching behavior have been found in the fabricated 1T1R cell, namely pre-forming ultralow...
It is reported that field emission can effectively enhanced for aligned carbon nanotubes (CNTs) as field emitters when the ratio of distance between neighboring nano-tubes to the height of each individual CNT is about 2. In this paper, we proposed pillar array design of CNTs to fulfill the optimum R/H ratio (the ratio between inter-pillar distance R and pillar height H) with high density of aligned...
The trap exploration of Pt/ZnO/Pt memory cells was made. Based on the temperature dependence of I-V characteristics, the conduction mechanisms in ZnO films are dominated by the hopping conduction and ohmic conduction in high-resistance state (HRS) and low-resistance state (LRS), respectively. Simulation results show that the trap spacing and trap energy level in HRS are around 2 nm and 0.46 eV, respectively...
The random access memory (RRAM) cells consisted with the Cu doped TiO2 film and both Pt inert electrodes has been purposed. Compared with the common conductive-bridging mode sample structure which have a Cu active electrode, a non-doped TiO2 film and a Pt inert electrode. The Cu doped film with both inert electrodes sample exhibited the endurance of 1000 cycles more than the common ones of 400 cycles...
In this work, we proposed a simple fabrication process, spin coating and dry etching, to construct CNT-interconnects. The CNT-interconnects formed by the slow rate spin coating method have conductivity of more than 102 (S/cm) and the CNT-interconnects with 102 square numbers possess about 30% conductive probability. In addition, we inserted metal bridges into 1000-μm-long CNT-interconnects to effectively...
Channels of FinFET are 3 dimensional fin-like structures which are thin enough to be fully depleted as the gate is appropriately biased leaving no leaky neutrally-charged leaky body. Different widths (fin thickness), different gate materials, and the Vt-adjustment using different implant energies are taken into account in this paper. It is then found that different fin thicknesses do affect the electrical...
The 3-D structural fin-like channels of FinFET suppress the leakage current as the sizes of devices get substantially shrunk. In this study, the fin-thickness effects on the electrical performances are mainly observed. Two different kinds of thickness (namely, 110nm, and 120nm) with the same channel length (0.1 micron) are put into comparison. The phosphorus implants of the same dose with different...
FinFET devices have the structure of 3-D fins as channels, which are capable of being fully depleted as the gate is biased and potentially suppress the leakage currents. In this paper, one compares poly-silicon gates with fully cobalt silicide gate to see how much they are affected by the fin widths. Two channel lengths (0.1 micron and 0.12 micron) at two different fin widths (namely, 110nm, and 120nm)...
Mismatched lattice constants between SiGe and silicon can cause the strain making the mobility improved. SiGe are grown underneath the channel apparently to form global strain over the whole devices, while Source/Drain refilled with SiGe would squeeze or pull up the devices uni-axially. The ID-VG characteristics curves and the maximum trans-conductance (gm) using strain engineering are observed to...
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