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This paper presents an overview of the technological challenges facing the future scaling of device dimensions needed to meet the performance scaling in accordance with Moore's law. A number of performance boosters have to be introduced in order to keep up with the expected performance gain in each new technology node. The introduction of strain engineering is an important feature as well as the implementation...
Photodiodes based on ZnO/Si heterostructures were fabricated by sputter deposition of polycrystalline n-ZnO films on p-Si substrates. CdTe and CdSe/ZnS nanoparticles were embedded at the junction in between Si substrate and ZnO thin films. The effect of nanoparticles embedding on electrical and optical properties of ZnO/Si photodiodes has been studied. I-V and photocurrent spectra measurements revealed...
Nanocrystalline diamond/amorphous composite carbon films were deposited by plasma enhanced chemical vapour deposition method. The concentrations of species in the films were determined by RBS (Rutherford backscattering spectrometry) and ERD (elastic recoil detection) methods. The RBS results showed the main concentrations of C in the films. The concentration of hydrogen was approximately 20 at.%....
This work presents the properties of nanocrystalline SiC(nc-SiC) films prepared by plasma enhanced chemical vapour deposition. A p-type silicon wafer with resistivity 2-7 Ωcm and (100) orientation was used as the substrate for the nc-SiC:H films. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was...
We present results of material optimization for the alignment marks used in the Electron-Beam Direct-Write (EBDW) lithography. Such marks have been proposed both for negative (grooves) as well as for positive (elevated) topographies. The primary mask for the alignment mark patterns is done by photolithography and e-beam lithography. The negative topography of the marks was transferred by Deep Reactive...
Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic circuits needed, for example, in computer power supplies, motor drives or the power inverters of photovoltaic systems. This paper describes how the unique properties of GaN enables a new generation of power transistors has the potential to reduce by at least an order of magnitude the cost, volume and...
This paper reports the capability of AlGaN/GaN HEMTs on Si (111) substrates for microwave power applications above 30 GHz. A current gain cut-off frequency ft=90 GHz and a maximum power gain cut-off frequency fmax=135 GHz are obtained for a 80 nm gate-length transistor. These results, associated with low lag effects, demonstrate the capability of these transistors for high performance, cost effective,...
GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN/AlGaN/sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a `drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an...
We subjected organic thin film transistors with different gate dielectrics to soft-UV irradiation. Irradiation reduces the transconductance on all devices, regardless the gate dielectric employed. However, UV irradiation differently impacts on the drain current: it decreases on devices with hexamethyl-disilazane treated gate dielectric, mainly due to transconductance degradation. Conversely, negative...
Low pressure apparatus combining N2O plasma, DEZn transported in argon and UV irradiation of the deposition zone has been used. ZnO layers were deposited on Si (100) and GaP (111) substrates. Best quality layers were deposited on Si substrates. Growth rate was changed in the range 2 to 90 μm/hour. Surface morphology at smaller growth rate was regular nanowalls type on both Si and GaP substrates. More...
Influence of damage by neutrons introduced in semi-insulating GaAs detectors is studied by current-voltage measurement and Photo-Induced Current Transient Spectroscopy (PICTS). Significant rise of the reverse current is observed at neutron fluencies exceeding 1013 ncm-2. The PICTS is used for evaluation of deep-level states in detector structures prior and after neutron bombardment. Formation of a...
This work deals with the performance of thin semi-insulating GaAs-based detectors of ionizing radiation DC-coupled to the low noise readout electronics. Fabricated detector have square shape Ti/Pt/Au Schottky blocking contact with dimension of 0.5 mm and full area AuGeNi eutectic alloy quasi-ohmic contact on the opposite site. The current-voltage characteristic and 241Am pulse-height spectra of the...
We present electrical characterization of Si(p)/GdScO3/Ru metal-oxide-semiconductor structures prepared by liquid injection metal organic chemical vapour deposition. Capacitance-voltage measurement revealed dielectric constant κ=22. Density of interface states was determined using conductance measurement. Annealing in forming gas resulted in decrease of the interface state density in the middle of...
Due to the recent advances in the microsystems field a new group of applications based in wireless applications have arisen. In order to provide these devices with the working autonomy that they need, micro direct methanol fuel cells emerge as a suitable solution because of the high energy density of the used fuel. The main challenge regarding micro fabrication technology is the fabrication of the...
This contribution reports on properties and characterization of InAlN/GaN structures prepared by metal organic chemical vapour deposition (MOCVD) using secondary ion mass spectroscopy (SIMS). The SIMS revealed the vertical cross section of the InAlN/GaN sample structures on SiC substrate and also visualizes the different growth procedure results. The SIMS comparison of the structures shows the Al,...
Monte Carlo device simulations are carried out to analyse electron transport in scaled Si and In0.3Ga0.7As MOSFETs starting from a 25 nm gate length Si and In0.3Ga0.7As MOSFETs monitoring the electron velocity, kinetic energy and sheet density along the channel at a supply voltage of 1.0 V. We have found that while the drive current is scaled Si MOSFETs dramatically increases, the current increase...
Heterojunction Bipolar Transistors with GaAs base and InGaP emitter have increasingly become important since they have great potential for numerous low- and high-frequency microwave circuit applications due to their high linearity, good reliability and nearly ideal current-voltage characteristics. Current gain and transit time are two important factors for determining the performance of these devices...
The paper deals with the hydrogenated amorphous silicon (a-Si:H) films about 300 nm in thickness prepared by using rf-PECVD with hydrogen dilution R = 10 of the silane source gas in the amorphous growth regime onto clean Corning Eagle 2000 glass substrates at different deposition temperatures ranging from 50 to 200°C. Structural and optical properties of the films were obtained from X-ray diffraction...
In this paper the furnace annealing effects on the titanium silicide formation over a range of temperatures are investigated using physical and chemical measurements. In particular the formation steps and the properties of the interface between TiSi2 and Si have been characterized by mean of Transmission Electron Microscopy. The experiments have been performed with the final aim to obtain Schottky...
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