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The aim of this paper is to characterize Hydrogen Silsesquioxane (HSQ) inorganic negative electron resist on GaAs substrate at 40 keV electron energy. The influence of process parameters on resist profiles was investigated with the aim of obtaining vertical sidewalls. The values of the proximity effect function parameters (βf, βb and ηE) were calculated using Monte Carlo approach. Observation of HSQ...
We present results of material optimization for the alignment marks used in the Electron-Beam Direct-Write (EBDW) lithography. Such marks have been proposed both for negative (grooves) as well as for positive (elevated) topographies. The primary mask for the alignment mark patterns is done by photolithography and e-beam lithography. The negative topography of the marks was transferred by Deep Reactive...
The key elements in the fabrication of future devices are lithography and pattern transfer. The continuous advances in miniaturization and increasing integration densities are a direct result of improved lithographic resolution and overlay accuracy. Electron beam direct write and e-beam projection lithography are potential candidates for the mass production of microelectronic devices with critical...
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