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Au contacts have been prepared to In0.12Ga0.88As0.11Sb0.89/GaSb:Te and to GaSb:Ge/GaSb: Te epitaxial structures. For the In0.12Ga0.88As0.11Sb0.89/GaSb:Te structure Au yielded relatively good Schottky contact, but the current-voltage characteristics exhibited two regions at low temperatures due to two competing parallel pathes with different apparent barrier heights, ideality factors, and series resistances...
Bulk semi-insulating (SI) GaAs material due to its relatively high resistance against neutrons [1,2] seems to be an excellent candidate for fabrication of a neutron detector (e.g. neutron digital imaging). Influence of various neutron integral fluencies was studied at a set of detectors based on semi-insulating GaAs. Changes in the detection and electrical properties occurred at various neutron fluencies...
Current-voltage (I-V) characteristics of radiation detector structures based on semi-insulating (SI) GaAs obtained with new types of metallizations used to form quasi-ohmic contacts are described. Three different metals (In, Gd and Mg), having lower work function in comparison with the standard AuGeNi eutectic alloy, were used. The new contacts form a blocking barrier for holes ("minority"...
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