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This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77 GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SILVA CO. Simulated IV characteristics are presented and shown to match well...
The current voltage characteristics of inhomogeneous Schottky contact with discrete Gaussian distribution of barrier heights are simulated considering thermionic emission diffusion theory. The diode parameters are extracted by fitting of simulated current voltage data into thermionic emission diffusion current equation. The effect of discrete Gaussian distribution of barrier heights on barrier parameters...
Deep level transient spectroscopy (DLTS) measurements were carried out on silicon diodes prepared by Al-diffusion into n-type material. The main purpose of the experiments was to test our theory concerning the possibility of unambiguous interpretation of the DLTS spectrum. A simple method of correct assignment of the observed traps to either side of the junction is outlined. Using this method based...
In this work, we present the results of development of element base for advanced cryogenic silicon diode temperature sensors (DTSs). In these sensors, influence of the switching effects on sensor characteristics is absent, that allows solving the problem of rise in temperature monitoring efficiency with the required high accuracy in low-temperature region. The developed DTSs will allow ones to meet...
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