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We have developed a high performance pMOSFET with ALD-TiN/HfO2 gate stacks on (110) substrate using gate last process at low temperature. High work function and low gate leakage current are obtained. An extremely high mobility equivalent to P+poly-Si/SiO2 on (110) substrate (171 cm2/Vs at 0.5 MV/cm) is achieved with ALD-TiN/HfO2 on (110) substrate in the thinner Tinv region of 1.7 nm. Vth roll-off...
The low field mobility in double- and single-gate structures is analyzed for (100) and (110) SOI substrate orientation. Due to volume inversion, mobility in double-gate ultra-thin body (110) SOI FETs is enhanced in comparison with the mobility of single-gate structures in the whole effective field range. In double-gate (100) structures the mobility decreases below the single-gate value for high effective...
The interest in carbon nanotubes (CNTs) for electronic applications is predominantly based on the outstanding properties of single walled CNTs, which include ballistic transport and high thermal conductivity. However, there is a need to avoid the standard metal catalysts used for CNT growth, which act as "lifetime killers" for silicon devices. Here the authors present a Ge catalyst growth...
A novel and uniform channel program and erase method is presented to replace the FN tunneling operation for SONOS cells in NAND architecture. The proposed operation utilizes substrate transient hot electron (STHE) injection and substrate transient hot hole (STHH) injection for programming and erasing, respectively. Gate bias polarity can control whether hot electrons or hot holes are injected into...
AlGaN/GaN power high electron mobility transistors (HEMTs) with a Fe-doped GaN buffer on a Si substrate were presented for high power switching applications. In order to investigate the effects of an Fe-doped GaN buffer on device characteristics, HEMT devices with an Fe-doped GaN buffer on Si were fabricated alongside with the conventional devices utilizing an unintentionally doped (UID) GaN buffer...
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