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This paper reports the effect of shallow-trench-isolation (STI) on generation-recombination (G-R) noise and flicker noise variation in 0.13-μm RF MOSFETs for the first time. The devices with relatively small finger widths (W = 1 μm/Nfinger = 40 and W= 5 μm/Nfinger = 8) presented more pronounced G-R noise compared to those with W= 10 mum/Nfinger = 4 devices. In addition, a wide variation of noise levels...
The paper proposes and validates a new doubly functional quartz wafer-level package concept for MEMS devices. In addition to the mechanical and environment protection, thick-Cu high-Q inductors for RF applications are made within the package processing. A double-side processing of a quartz wafer is reported. While the top side of the quartz is used to realize quartz-embedded horizontal plane Cu inductors,...
Novel test structures were designed for TEM analysis to examine the origin of dielectric breakdown in Cu/low-k interconnect systems, and it was found to be associated with interfacial delamination. Using an electrostatic discharge zapping technique enables the dielectric breakdown monitoring progressively from the interfacial delamination between a SiC capping layer and a SiOC inter-dielectric layer...
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