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Self-heating in multifinger GaAs pseudomorphic-HEMT devices was investigated by micro-Raman spectroscopy. The device temperature was probed on the die as a function of applied bias, external heating, and device geometry. The temperature of the top GaAs layer was recorded inside the source-drain gap, as well as on the device periphery using 488-nm laser excitation. Obtained Raman temperatures were...
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