IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
IEEE Transactions on Electron Devices
Description
Identifiers
ISSN | 0018-9383 |
e-ISSN | 1557-9646 |
Publisher
IEEE
Additional information
Data set: ieee
Title history
- ( 1952 - 1954 ) Transactions of the IRE Professional Group on Electron Devices
- ( 1955 - 1962 ) IRE Transactions on Electron Devices
Articles
IEEE Transactions on Electron Devices > 2018 > 65 > 1 > 257 - 262
Cavity modification is proposed with the aim of enhancing the continuous frequency tunability of a gyrotron. The modification can be applied to both uniform and tapered gyrotron cavities and involves just using an additional cavity section. It ensures larger effective cavity length and thus lower starting current for higher order axial modes. As a consequence, the frequency tuning band of the gyrotron...
IEEE Transactions on Electron Devices > 2018 > 65 > 1 > 243 - 250
In this paper, we propose a gated lateral bipolar junction transistor (GLBJT) that has a cascade structure, resulting in improved sensing performance over conventional GLBJTs. The device can be operated in bipolar junction transistor (BJT) mode, metal–oxide–semiconductor field-effect transistor (MOSFET) mode, and a hybrid MOSFET-BJT mode under input bias control. The device exhibits higher transconductance...
IEEE Transactions on Electron Devices > 2018 > 65 > 1 > 72 - 78
GaAs metal–oxide–semiconductor capacitors with NdTaON as gate dielectric and NdAlON, NdON or AlON as interfacial passivation layer (IPL) are fabricated, and their interfacial and electrical properties are compared with their counterpart without IPL. Experimental results show that owing to the suppressed hygroscopicity of NdON by Al incorporation, best improvements in electrical properties and reliability...