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We simulated the static behavior of scaled FinFETs employing a self-consistent Multi-Subband Ensemble Monte Carlo simulator for non-planar devices. To be able to take into account the three-dimensional device structure, the 2D Schrödinger equation is solved in several cross sections; the coupled solution of the 3D Poisson equation and the 1D Boltzmann transport equation through the ensemble Monte...
This paper presents a multilevel spin-orbit torque magnetic random access memory (SOT-MRAM). The conventional SOT-MRAMs enables a reliable and energy efficient write operation. However, these cells require two access transistors per cell, hence the efficiency of the SOT-MRAMs can be questioned in high-density memory application. To deal with this obstacle, we propose a multilevel cell which stores...
A compact aging model for circuit simulation has been developed by considering all possible trapped carriers within MOSFETs. The hot carrier effect and the N(P)BTI effect are modeled by integrating the substrate current as well as the oxide field change due to the trapped carriers. Additionally, the carriers trapped within the highly resistive drift region are included for high-voltage (HV)-MOSFET...
3D sequential integration requires top FETs processing with a low thermal budget (500°C). The analysis of the origin of the performance difference between Low Temperature (LT) MOSFET and high temperature standard process must take into account a potential EOT modification for short gate lengths. In this work, the difficulty of precise EOT extraction for scaled devices is observed by CV measurements...
A compact model for the low and high resistance state conduction characteristics of electroformed capacitors with hexagonal boron nitride (A-BN) as insulator material and with multi-layer graphene and metal electrodes is presented. The model arises from an approximation of the expression for multi-filamentary electron transport with parabolic shaped constrictions. The model takes into account the...
In this work, we present a circuit model of diffusive spintronic devices capable of capturing the effects of both electric and magnetic fields. Starting from a modified version of the well-established drift-diffusion equations, we derive general equivalent circuit models of semiconducting/metallic nonmagnets and metallic ferromagnets. In contrast to other models that are based on steady-state transport...
The cut-off frequencies of silicon-germanium hetero-junction bipolar transistors (SiGe HBTs) have entered the THz range at the cost of high current density and relatively low breakdown voltages. Typically, the common-emitter breakdown voltage with open base (BVCEO) is used to indicate the allowed breakdown voltage related operation limit. However, an open base (i.e. an infinite source impedance) is...
The hysteresis in the gate transfer characteristics of transistors made of two-dimensional materials is one of the most obvious problems of this novel technology. Here we attempt for the first time to develop a physical modeling approach for describing this hysteresis in devices based on two-dimensional materials. Our model is based on a drift-diffusion TCAD simulation coupled to a previously established...
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