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In this work we present a novel and comprehensive method for thermal characterization of GaN based transistors. By means of two coupled simulations (TCAD and FEM) a detailed insight into the device physics has been provided whereas an experimental method (low-RF drain conductance measurement) is recognized as a simple and accurate method for a full transient analysis of the transistors. The method...
Enhancement-mode gallium nitride transistors have been commercially available for over five years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this paper, we discuss the state-of-the-art and the expected progress of GaN technology over the next few years, showing that Moore's Law is alive and well in the world of power semiconductor technology...
This paper reports for the first time a gate-recessed GaN-on-Silicon MOS-HEMT device with true normally-off operation and high breakdown voltage using a one step simultaneous oxidation/dissolving treatment by hybrid alkaline solution with hydrogen peroxide and potassium hydroxide. After 40-min wet etching at 95 ºC solution temperature, the Al2O3/GaN MOS-HEMT device features a true normally-off operation...
This work presents a quasi-normally-off gallium nitride (GaN) transistor with positive gate threshold voltage based on depletion-mode technology, suitable for gate drivers or logic circuits. Quasi-normally-off behaviour is achieved by the series connection of multiple Schottky diodes in the source path of an initially normally-on transistor. As opposed to conventional approaches, a novel quasi-normally-off...
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