The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This work reports on a 600 V GaN-on-Si power transistor with monolithic integrated gate driver. The circuit is based on Schottky-gate depletion-mode technology and fabricated on a 2×3 mm2 chip. The push-pull gate driver stage implements a quasi-normally-off pull-up transistor, fabricated with monolithic integrated series-connected Schottky diodes for positive voltage-level shifting in the source path...
This work presents a quasi-normally-off gallium nitride (GaN) transistor with positive gate threshold voltage based on depletion-mode technology, suitable for gate drivers or logic circuits. Quasi-normally-off behaviour is achieved by the series connection of multiple Schottky diodes in the source path of an initially normally-on transistor. As opposed to conventional approaches, a novel quasi-normally-off...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.