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This contribution investigates behavioral MOSFET models used for the simulation of conducted and radiated electromagnetic interferences (EMI) of an automotive inverter. A combined simulation of an equivalent circuit and the 3D geometry for a traction inverter based on 1.2 kV, 40 A SiC MOSFETs is presented. The model considers the MOSFET as a combination of parasitic elements of the package, voltage-dependent...
This work presents a quasi-normally-off gallium nitride (GaN) transistor with positive gate threshold voltage based on depletion-mode technology, suitable for gate drivers or logic circuits. Quasi-normally-off behaviour is achieved by the series connection of multiple Schottky diodes in the source path of an initially normally-on transistor. As opposed to conventional approaches, a novel quasi-normally-off...
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