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Coherent interface phonon generation by surface plasmon in silver-SiO2-silicon system is analyzed, based on the impulsive stimulated scattering theory model. The surface plasmon is first analyzed, and applied to semiclassical stimulated Raman scattering theory. Our calculatation shows that the photon-induced surface plasmons store about 20–30% of the total incoming energy, and it is considered in...
Local density of states of plasmons in a cylindrical silicon-SiO2-silver system induced by different polarization electric fields is analyzed numerically. Open source finite-difference time-domain method code is used. The result shows TMz polarization induces more plasmons than TEz polarization.
Experimental works managing electrical injection of spin polarization in n-type and p-type silicon have been recently carried out up to room-temperature. In spite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on phonon-induced electron spin depolarization in silicon structures, in a wide range of values of lattice temperature,...
In this paper different roughness profiles of transparent conductive oxide (TCO) have been simulated to calibrate a thin-film hydrogenated amorphous silicon double-junction tandem solar cell (a-Si:H/a-Si:H) against the experimental data. The TCO texture was modelled using a periodic triangular profile. The width of the period was kept constant and the height is changed according to the simulated angle...
Multiple, serially-connected nanoscale rings are analyzed using a tight-binding computational algorithm which allows calculation of the transmission and current characteristics of the system as a function of energy and external magnetic flux. Results show the role of bilateral symmetry in the system response to imposed flux, which can shift the system from metallic to semiconducting.
Measuring a quantum system implies some kind of perturbation of the system itself. A novel approach to include the perturbation of the quantum electron device, i.e. the back-action, due to the TeraHertz (THz) measurement of the total current is presented. The approach is based on a microscopic description of the interaction between the quantum system and the measuring apparatus, in terms of conditional...
The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-dependent and static behavior of shot noise. The concept of basic paths in a multi-state process provides a clear interpretation of the noise regimes, and allows locating cut-offs in autocorrelation functions and spectral densities.
The non-local band to band tunneling model developed and implemented into the three-dimensional device simulator by the authors is evaluated for the tunnel-FET modeling focused on device geometry effects. Measured characteristics of SOI, Fin, and parallel-plate silicon tunnel FETs fabricated by the authors are compared with simulations based on the non-local model. Although each device structures...
The implementation of lateral doping profiles on quantum transport simulations of ultra-scaled transistors will affect their electrical characteristics. This work presents a systematic study of the impact of lateral doping profiles when the gate length of silicon Trigate FinFETs is scaled down from 6.6 nm to 5.4 nm.
Enhancement mode AlGaN/GaN high electron mobility transistor with p-InAlN gate is designed and successfully studied its electrical properties. Threshold voltage of the device is 1.9 V, which is required magnitude of threshold voltage for real device. Similarly, the maximum drain current is 520 mA/mm and trasconductance is 183 mS/mm, which is the record estimation for enhancement-mode (e-mode) device...
Design rule is an important interface between design and manufacturing. It becomes more complex as the process advances to 16-nm and beyond. Current approaches to generate design rules are empirical shrink and lithographic simulation. However, it is time-consuming and costly to revise design rules for performance boost and yield improvement after design rules are frozen. Early performance gains in...
A defective double stranded poly(dG)-poly(dC) DNA molecule under axial mechanical strain is analyzed using a tight-binding computational model which allows calculation of the transmission and current characteristics of the system as a function of electron energy. Results show the existence of highly sensitive electron transmission behavior with respect to the on-site energy perturbations.
Several sources of variability such as imperfections during the manufacturing process, variations in critical dimensions (eg. oxide thickness, gate length), or intrinsic parameter fluctuations (eg. random dopants), influence the both device design and device and circuit performance. In this work, we have studied the impact of a shape of the device body on the characteristics of a 10.7 nm gate length...
The ultimate end of CMOS scaling was predicted almost immediately after the now ubiquitous technology was invented by Frank Wanlass in 1963 [1]. Indeed, many possible limitations to downscaling were discussed in the 1970s, 80s, and 90s [2]. In 2003, Zhirnov et al. [3] estimated the minimal feature size of a “binary logic switch” to be around 1.5nm, based on the Heisenberg uncertainty and Landauer...
Though the energy bandgap of strained graphene remains zero, the shift of Dirac points in the k-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundreds meV in strained/unstrained junctions with a strain of only a few percent. This conduction gap strongly depends on the direction of applied strain and the transport direction...
We have developed a code for the simulation of graphene-based devices consisting of cascaded armchair sections with width discontinuities, in the presence of a generic potential landscape. This is based on a scattering-matrix approach and on the solution of the Dirac equation in the reciprocal space. The presence of width discontinuities requires a particular treatment of the continuity equation for...
It is widely believed that the established route of microelectronic scaling is approaching its end: further downscaling of semiconductor devices carries disproportionate penalties in power consumption and poses fundamental fabrication challenges. Instead of scaling of devices, Moore's law is now increasingly about scaling computing systems: single-core devices toward larger, multi-core systems.
We present a numerical method which allows an approximate but fast computation of the potential profile in a graphene sample subject to the electrostatic action of biased gates, including the effect of different contributions, such as those from doping or from charged impurities. The procedure is applied to the evaluation of the effect of a biased probe, coupled to the graphene flake through a space-dependent...
We show that the normal-superfluid transition in bilayer graphene (BLG) predicted to occur at high temperature is strongly affected not only by the dielectric constants of the insulators, but also by the proximity of ideal metal gates. Even assuming optimistically an unscreened interlayer Coulomb interaction, we find that for a gate-insulator thickness smaller than 2-to-5 nm of equivalent SiO2 thickness,...
Herein, we consider examine the possibility of photodetectors with reduced signal-to-noise based on a three quantum well structure with one single well and one double well. This structure facilitates photon detection through the following sequence of events: photon absorption, phonon emission, and then photon absorb of a photon having the same wavelength as the first one. Even though this design two...
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