The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Thermoelectric properties of graphene and graphene-based nanostructures have recently attracted great attention from both physics and engineering communities. However, to make graphene a good thermoelectric material, two important issues must be overcome, i.e. (i) its gapless character, which leads to a poor value Seebeck coefficient in pristine graphene and (ii) its high thermal conductivity that...
In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap...
The effects of local uniaxial strain on grapshene devices like single-barrier structure and p-n tunnel diode are investigated. The strain-induced displacement of Dirac points allows us toi suppress and/or control the Klein tunneling and the interband tunneling, which leads to strong effect of negative differential conductance. It is shown that when strain is suitably applied, the peak-to-valley ratio...
We study the thermoelectric properties of devices made of two partially overlapped graphene sheets. As a consequence of the weak van der Waals interactions between graphene layers, it is shown that the phonon conductance in these junctions is strongly reduced compared to that of single graphene layer structures. In contrast, their electrical conductance is more weakly affected. We hence demonstrate...
Though the energy bandgap of strained graphene remains zero, the shift of Dirac points in the k-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundreds meV in strained/unstrained junctions with a strain of only a few percent. This conduction gap strongly depends on the direction of applied strain and the transport direction...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.