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TSV (Through Silicon Via) is regarded as the key enabling technology for 2.5D and 3D IC packaging solution. Si interposers with TSV have emerged as an excellent solution providing high wiring density interconnection, minimizing CTE mismatch to the Cu/low-k chip that is vulnerable to thermo-mechanical stresses, improving electrical performance and decreasing power consumption due to shorter interconnection...
In recent years, thermal problem of electronics has been serious, and accurate thermal design has been required. In conventional thermal design of power Si MOSFET, which is widely used semiconductor device for current control in a lot of area, uniform heat generation has been assumed, and designer has employed average temperature of power Si MOSFET. However, for more accurate thermal design, the non-uniform...
Hybrid integration technology of a laser source on a silicon optical waveguide platform by flip-chip bonding for silicon photonics has been developed. Several types of integrated laser sources were demonstrated, including multi-channel, high-density and high temperature operation.
We propose the first thermal via technology for a silica-based planar lightwave circuit (PLC) to enable us to stack electronic components such as transimpedance amplifiers (TIAs) on a PLC. This is possible because the effective heat dissipation of the via can prevent the performance degradation of the TIA. The temperature increase of the TIAs was suppressed to only 8.7 °C by the thermal vias, while...
Hybrid bonding among Cu, Ti, quartz, and polydimethylsiloxane (PDMS) substrate, by using vacuum ultraviolet (VUV) irradiation and vapor-assisted surface modification processes, turned out highly feasible at 150 °C and atmospheric pressure. Such a hybrid bonding will be of practical use in the 3D integrations of flex transparent substrates and interconnection layers, which are often used in the optical...
This paper compared the filling profile of electroplated Cu in through silicon via (TSV) with different aspect ratio at different current density. The experiment results indicated that bottom-up growth of Cu in TSV was obvious when the current density is 1 mA/cm2 and 3 mA/cm2. When the current density was 6 mA/cm2, the conformal growth of Cu was dominant. When the current density was 12 mA/cm2, the...
We realized the room temperature direct bonding method for polyethylene 2, 6 naphthalene dicarboxylate (polyethylene naphthalate, PEN) film by means of surface activated bonding method using nano-adhesion layer.
A potential technology by silicon interposer enables high bandwidth and low power application processing devices of the future, because the demand of smart mobile products are driving for higher logic-to-memory bandwidth (BW) over 30 GB/s with lower power consumption and ultra-memory capacity. This paper presents a 2.5D-IC structure with silicon interposer to demonstrate electrical performances including...
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