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TSV (Through Silicon Via) is regarded as the key enabling technology for 2.5D and 3D IC packaging solution. Si interposers with TSV have emerged as an excellent solution providing high wiring density interconnection, minimizing CTE mismatch to the Cu/low-k chip that is vulnerable to thermo-mechanical stresses, improving electrical performance and decreasing power consumption due to shorter interconnection...
This paper compared the filling profile of electroplated Cu in through silicon via (TSV) with different aspect ratio at different current density. The experiment results indicated that bottom-up growth of Cu in TSV was obvious when the current density is 1 mA/cm2 and 3 mA/cm2. When the current density was 6 mA/cm2, the conformal growth of Cu was dominant. When the current density was 12 mA/cm2, the...
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