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The following topics are dealt with: modified floating gate, NAND flash memory, carrier mobility, ion implantation, continuous anodic oxidation, differential Hall effect, dielectric films, high voltage isolation device, nanowire FET, sigma-delta modulator, all digital multiplying DLL, precision digital delay line, proximity communication, DC coupled sensor amplifier, offset cancellation, column-parallel...
This paper studies the nanomechanical properties, including hardness and Young's modulus (both in a dry condition and in deionized water), fracture toughness, cohesive strength and scratch resistance of eight commonly used SiO2-based dielectric films, Boron Phosphosilicate Glass (BPSG), BPSG with Rapid Thermal Processing (RTP), Phosphosilicate Glass (PSG), Spin-On Dielectric (SOD), Plasma Enhanced...
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