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The temperature dependence of avalanche breakdown voltage of InP-based separate absorption multiplication avalanche photodiodes (SAM APDs) was investigated for the first time. The work investigated APDs with InGaAs absorber and InP or InAlAs multiplication region. Effects of SAM APD design parameters such as absorber width, multiplication region width, and electrical file profile on the avalanche...
A dash-in-a-well design was employed to realise low threshold high efficiency lasers in the InAs/InGaAlAs/InP material system emitting near 1.55 μm. A processed 1.0 mm long and 5 μm wide as-cleaved and un-mounted Fabry Perot device reveals a threshold current as low as 47 mA, a total external efficiency of 0.36 W/A and a maximum total output power of 58 mW in cw operation at room temperature. The...
We have successfully developed 30-nm enhancement-mode (E-mode) InGaAs/InAlAs high electron mobility transistors (HEMTs) with an extremely high transconductance (gm ) of 2.22 S/mm, a current gain cutoff frequency (fT) of 554 GHz, and a maximum oscillation frequency (fmax ) of 358 GHz. The excellent high-speed performance was obtained by using a Pt/Mo/ Ti/Pt/Au buried gate technology, which enabled...
We demonstrate 30-Gb/s transmission using 1.1 μm-range VCSELs based on InGaAs/GaAs quantum wells, back-illuminated InGaAs PDs, and TIAs (InP-HBT). Error-free 30-Gbps transmission with 100 m-MMFs (GI32) is achieved for the first time.
The growth of GaP and AlAs/GaAs/GaP heterostructure nanowires on Si using Au colloids as catalysts was investigated. For GaP nanowire growth, we found an epitaxial relationship between the GaP nanowires and Si substrate. The AlAs/GaAs/GaP heterostructure nanowires were found to grow vertically on Si. Structural analysis indicates that the hetero-interfaces are within several atomic layers in thickness...
The 80 nm T-gate metamorphic high electron mobility transistors (MHEMTs) with 60% indium channel have been fabricated and the DC, microwave, and uniformity of the device were characterized. The MHEMT device showed the DC characteristics having an extrinsic transconductance of 1150 mS/mm and a gate breakdown voltage of -6.2 V. The fT and fmax obtained for the 80 nm times 100 mum MHEMT device are 235...
Fast atom (neutral) beam etching technique have already been developed and studied especially for fabrication processes in silicon based electron devices, however, electronic property of FAB etching for III-V materials have not been well clarified so far. In this paper, effects of surface damage due to FAB etching on current-voltage (I-V) characteristics of Schottky diodes were examined by introducing...
The effects of Zn- and S-doping on surface reaction kinetics of GaAs selective area MOVPE have been examined at 650degC. The surface reaction rate constant of GaAs was extracted at various dopant input pressure and different mask width. The dopant atomic concentration in the epilayer was measured as functions of growth rate and mask pattern. These results show strong dependency on the doping behavior...
For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the "microelectronics revolution" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular,...
New self thermal compensated Single Active Layer AlGalnAs EML demonstrates 43 Gb/s open-eye operation for temperatures ranging between 10°C and 70°C. The dynamic extinction ratio over the whole temperature range was above 10 dB.
A theoretical study has been carried out to evaluate key parameters of InxGa1-xAs material at energies below the direct band edge. The spectral dependence of refractive index, absorption coefficient, and photoelastic constants are evaluated for the whole composition range in InxGa1-xAs material on the basis of simplified models of the interband transitions. The results obtained from the present study...
This paper deals with the design and realisation of a Near Infra-Red (NIR) micro-spectrometer (1.5 to 2 mum) for non invasive detection. The device is based on an InGaAs strained QWs photodiode integrated in a MOEMS structure for wavelength tunability. We address two main challenges which are the realisation of a long wavelength photodetector combined with the fabrication of a micro-machined tunable...
InP/GaAsSb DHBT typically show a lower dc current gain to base sheet ratio in comparison to conventional InP/InGaAs DHBT, which limits the efficiency performance of InP/GaAsSb DHBT. A significant improvement in the dc current gain to base sheet ratio was achieved by inserting a pseudomorphic InGaP emitter spacer layer.
We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) fabricated using a simple mesa structure. The devices employ a 30 nm highly doped InGaAs base and a 150 nm InP collector containing an InGaAs/InAlAs superlattice grade. These devices exhibit a maximum fmax = 755 GHz with a 416 GHz /fT. This is the highest fmax reported for a mesa HBT. Through the use of i-line lithography, the...
This work demonstrates single photon emissions from a site-controlled quantum dot (QD) grown on a self-constructed nano plane. The size of the nano plane on the micron-sized multi-facet structure is accurately controlled by a low surface reducing rate (~16 nm/min). Single QD spectral lines were resolved and identified. The anti-bunching behavior reveals that single photons are emitted from the positioned...
Semiconductor III-V compounds are now and in future of central importance for human life. The leading position of GaAs will be continuously developed further. Single crystalline yield of InP needs to increase essentially. Very high growth rates are expected for GaSb, GaN and A1N. Accordingly, the mastering of the melt-solid, vapour-solid and flux-solid phase transitions on higher technological level...
A quantum well intermixing process combining ICP-RIE and SiO2 sputtering was investigated for the InGaAs/InGaAlAs multi-quantum wells. Optimal conditions including ICP-RIE etching depth, SiO2 deposition, and RTA process were obtained for a 60-nm blueshift.
A metamorphic HEMT (MHEMT) MMIC technology including circuit applications is presented. The MHEMT layers are MBE grown on 4-inch GaAs wafers. The technology is based on a 50 nm gate length MHEMT and includes a 50 mum substrate backside process with dry etched through-substrate vias. For the electron confinement an ln0.8Ga0.2As/ln0.53Ga0.47As composite channel was used. The devices are passivated with...
High-quality GaAsSb epitaxial layers lattice-matched to InP are required to construct ultra-highspeed (fT>500 GHz) InP/GaAsSb/InP double heterojunction bipolar transistors. The issues of achieving high-quality GaAsSb/InP heterostructures growth by gas source molecular beam epitaxy are reviewed.
We achieved an emission wavelength of 2.33 μm in an InAs/InGaAs multiple-quantum-well (MQW) laser grown by metalorganic vapor phase epitaxy. MQWs with flat interfaces and good thermal stability were obtained by decreasing the growth temperature to 500°C. The PL peak wavelengths of the MQWs were controlled from 1.93 to 2.47 μm by changing the thickness of the InAs wells. For a broad-area laser, the...
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