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The paper presents the results of analyses of the high vacuum standard obtained with the use of two models: traditional and the new, so-called ‘global’. It was found that the assumptions used in the traditional approach i.e. uniform and cosine gas flux density distribution at the orifice plane and the uniform distributions of the gas flux on the calibration and pumping chamber walls, are not fully...
In mixed logic/memory circuits manufactured as a system on chip, two different thicknesses of dielectric layers are required. Simultaneous formation of both layers is possible if oxidation of a silicon layer is preceded by local nitrogen implantation, since the rate of oxidation depends on the nitrogen implantation dose and its profile.Experiments presented in this work show a possibility and an attempt...
A method of temperature control for selenization process conducted in vacuum quartz tube furnace with radial energy transfer and a movable sample holder has been described. Selenization of metallic precursors to obtain CuInSe 2 absorber layer of a photovoltaic cell requires a special approach to the temperature regulation, where two-stage heating process is necessary. The modular process control...
The molecular gas flow parameters were evaluated using cosine form of the scattering function of the molecules incident on the surface. This gas scattering model is commonly used for calculating the vacuum system parameters, but it is theoretically valid only if the vacuum system is in equilibrium. This also means that there is no flow in the system. We applied the Maxwell's model of gas scattering...
A new variety of thermionic method for determining the work function (WF) is described. Thermionic current flow from electrically heated short homogeneous filament to spiral anode, voltage drop along the filament, and temperature of the filament ends are measured, whereas temperature distribution along the filament and WFs are obtained by computer simulation. The WFs obtained for tungsten and ReMo...
Phase diagrams have been studied to describe the RF PECVD process for intrinsic-hydrogenated silicon Si:H and silicon–low germanium alloy a-Si 1−x Ge x :H thin films using textured Al substrates that have been overdeposited with n-type amorphous Si:H (n + a-Si:H). UV, vis, IR, atomic force microscopy (AFM), Raman spectroscopy, small angle X-ray and cross-section transmission...
Results concerning influence of radio-frequency plasma-assisted chemical vapor deposition (RF PA CVD; 13.56MHz) processing parameters on a-C:N:H layer deposition are presented in this work. The following parameters have been taken into consideration: substrate temperature, plasma RF generator power, composition of reactive gas mixture, gas pressure and time of deposition. A special interest has been...
The pulsed magnetron sputtering technique was applied for the preparation of layers of Bi 2 Te 3 and Sb 2 Te 3 . Target materials were synthesized in evacuated quartz ampoules by melting elemental powders mixed in stoichiometric proportions. The structure and microstructure of targets and prepared films were characterized by X-ray diffraction, scanning electron microscopy...
Ultra-thin (5 and 6nm) silicon oxynitride layers have been fabricated by the plasma-enhanced chemical vapour deposition (PECVD) process. Split experiments with annealing of the deposited dielectric layers were performed using the RTP reactor and a standard furnace, both at 900°C. Possible changes in properties, structure and chemical composition of the obtained layers were investigated by means of...
Electron field emission measurements from structurized cathodes was reported. Silicon (Si) and boron-doped silicon carbide (SiC:B) had been chosen as a base materials for microtip field emission arrays (FEA). Each of single silicon FEAs has been covered by a thin metal layer using chromium (Cr), titanium (Ti) or platinum (Pt) to reduce the threshold voltage of electron emission. Surface of boron-doped...
The influence of deposition conditions of nucleation GaN layer on the properties of high-temperature GaN layer, grown on sapphire substrates, was investigated. The hydride vapor phase epitaxy (HVPE) three-section horizontal hot-wall furnace technique was applied. Various temperatures, HCl flows and time intervals of nucleation layer growth were utilized. Based on previous studies the following experimental...
The application of anti-reflective coatings (ARC) is a good method to improve the solar cell construction. The authors developed the RF plasma enhanced chemical vapour deposition method for preparation of amorphous silicon–nitrogen (a-Si:N:H) films for potential optoelectronic applications. The films have been obtained on borosilicate glass and monocrystalline silicon (100) (Cz–Si) in a process with...
Molecular beam epitaxy (MBE) is presented as a powerful and flexible technology for research and development (R&D) as well as for mass production of nanoelectronic structures, based on a huge variety of materials. Its historical background, basic properties, advantages—in particular the production potential—as well as some trends in the field are shown.
Recent developments in the photovoltaic (PV) industry, driven by a shortage of solar grade Si feedstock to grow Si wafers or ribbons, have stimulated a strong renewed interest in thin-film technologies and in particular in solar cells based on protocrystalline hydrogenated amorphous silicon (a-Si:H) or nanocrystalline/microcrystalline (nc/μc)-Si:H. There are a number of institutions around the world...
Optical emission spectroscopy and Langmuir probe have been used to study the power dependence of medium frequency, 100kHz, pulsed magnetron sputtering discharge. Copper target was sputtered in the argon atmosphere. The examined power ranged from 0.5 to 4.5kW which gave an average power density on target surface from 25 to 115W/cm 2 . Optical spectroscopy did not reveal any significant changes...
Two types of magnetic tunnel junctions (MTJs) with the configuration: substrate Si(100)/SiO 2 47nm/buffer/IrMn 12nm/CoFe 2.5nm/Al–O 1.5nm/NiFe 3nm/Ta 5nm and Si(100)/SiO 2 47nm/buffer/IrMn 10nm/CoFeB 3nm/MgO 2nm/CoFeB 4nm/Ta 5nm were prepared by the sputtering technique with two different buffers: A-Cu 25nm and B-Ta 5nm/Cu 25nm. The B buffer caused a high texture of MTJs whereas in...
A computer programme for numerical modelling of electron flow in vacuum instruments is presented. The programme allows to simulate trajectories of charged particles in both high and low vacuum of the order of tens milibars. It combines a commercially available packet SIMION 3D v.7.0 destined for tracing trajectories of charged particles in electric and magnetic fields, and a Monte Carlo programme...
In this work, we have chosen oxidation of TiN thin films as a feasible method for preparation of nitrogen-doped titanium dioxide thin films, TiO 2 :N, for photocatalytic applications. DC reactive magnetron sputtering with the plasma emission control was used for deposition of stoichiometric TiN thin films. The microstructure and chemical composition of films before and after oxidation were...
Rapid development in hard coating technology calls for simple construction depth profile analysers. Here we present results of depth profile analysis of a set of Ar arc plasma deposited TiN, CrN layers. The results are obtained with the use of recently constructed simple glow discharge mass spectrometer (GDMS) and compared with secondary ion mass spectrometer (SIMS). In SIMS (SAJW-05 model) we apply...
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