Recent developments in the photovoltaic (PV) industry, driven by a shortage of solar grade Si feedstock to grow Si wafers or ribbons, have stimulated a strong renewed interest in thin-film technologies and in particular in solar cells based on protocrystalline hydrogenated amorphous silicon (a-Si:H) or nanocrystalline/microcrystalline (nc/μc)-Si:H. There are a number of institutions around the world developing protocrystalline thin-film Si:H technologies as well as those based on tandem and triple junction cells consisting of a-Si:H, a-Si:Ge:H and nc/μc-Si:H. There are also several large commercial companies actively marketing large production-scale plasma-enhanced chemical vapor deposition (PECVD) deposition equipment for the production of such modules. Reduction in the cost of the modules can be achieved by increasing their stabilized efficiencies and the deposition rates of the Si:H materials. In this paper, recent results are presented which provide insights into the nature of protocrystalline Si:H materials, optimization of cell structures and their light-induced degradation that are helpful in addressing these issues. The activities in these areas that are being carried out in the United States are also briefly reviewed.