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The electrical and optical properties of polycrystalline silicon films are dominated by grain-boundary defects. It is therefore of particular interest to obtain columnar grain growth during the deposition process. In this work, we studied the properties of RTCVD deposited polycrystalline silicon films suitable for solar cell production. The effect of substrate temperature on texture and paramagnetically...
In this work, the combination of in-depth scanning Auger microscopy with Raman microprobe spectroscopy is applied for the detailed microstructural characterisation of CuInS 2 (CIS) thin films. CIS films are used for the fabrication of high efficiency solar cell devices. These films are obtained by sequential sputtering of Cu and In layers on a Mo-coated glass substrate, followed by a sulphurisation...
CdTe thin films were prepared by thermal evaporation under a vacuum of 10 -6 Torr and with a deposition rate of about 60nm/min. X-ray diffraction studies of the as-deposited films revealed polycrystalline films with cubic structure. The effect of heat treatment with or without CdCl 2 enhances the grain size and improves the crystallinity of the films. Moreover, the activation...
The manufacturing of CuInSe 2 (CIS) thin films by selenization of Cu-In alloy precursors in a graphite container is described. The copper-indium alloy was formed by magnetron sputtering of Cu/In multilayers. By sequential deposition of Cu and In the 20 alternate layers structure with total thickness varying from 250 to 500nm was obtained. The Cu/In ratio was altered by adjusting the layer...
Deposition of polycrystalline copper (I) selenide thin films onto glass substrates at relatively low temperature (95°C) have been carried out by chemical route using optimized preparative conditions. The XRD pattern confirmed the formation of copper (I) selenide semiconducting films with orthorhombic structure. A direct-type transition with band gap energy of 1.73eV was reported from optical absorption...
Society faces a change from an age of vast and silently accepted energy supplies to an age requiring conscious effort to secure new and adequate source-energy for its future. The criteria for success will be different from currently customary methods. The sheer magnitude of the “product” will involve interrelationships of several participating technological and social parameters. The practice of customary...
Intrinsic nanocrystalline silicon films (nc-Si:H) were prepared by plasma enhanced chemical vapor deposition (PECVD) method. Films’ microstructures and characteristics were studied with Raman spectroscopy and Atom Force Microscope (AFM). The electronic conductivity of nc-Si:H films was found to be 4.9×10 0 Ω −1 cm −1 , which was one order of magnitude higher thanthe reported...
Al-induced crystallisation of microcrystalline Si thin films prepared by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR–PECVD) on glass and SiO 2 coated Si wafers has been studied. The starting structure was substrate/μc-Si/Al. Annealing this structure in the temperature range 370–520°C, immediately following deposition of the Al layer, resulted in successful...
We present a study on amorphous SiO/SiO 2 superlattice using grazing-incidence small-angle X-ray scattering (GISAXS). Such nanostructured material might be of great interest for photovoltaic conversion and optoelectronics. Amorphous SiO/SiO 2 superlattices were prepared by magnetron sputtering of thin SiO and SiO 2 films (20 layers each) on Si (100) substrate. Rotation of the...
The application of anti-reflective coatings (ARC) is a good method to improve the solar cell construction. The authors developed the RF plasma enhanced chemical vapour deposition method for preparation of amorphous silicon–nitrogen (a-Si:N:H) films for potential optoelectronic applications. The films have been obtained on borosilicate glass and monocrystalline silicon (100) (Cz–Si) in a process with...
Recent developments in the photovoltaic (PV) industry, driven by a shortage of solar grade Si feedstock to grow Si wafers or ribbons, have stimulated a strong renewed interest in thin-film technologies and in particular in solar cells based on protocrystalline hydrogenated amorphous silicon (a-Si:H) or nanocrystalline/microcrystalline (nc/μc)-Si:H. There are a number of institutions around the world...
The most promising technologies of silicon nitride hydrogenated layers for application in solar cells are based on plasma-chemical methods. In this paper, results concerning radio-frequency plasma-enhanced chemical vapour deposition (RF PE CVD) method applied in the technology of a-Si x N y :H layers on glass and polycrystalline silicon are presented. For the purpose of this research...
Recent investigations of the semiconductive properties of urania indicate that the oxides of uranium may be useful in the fabrication of certain active electronic devices. UO 2 and U 3 O 8 have been characterized as to their photo-optical properties and active devices have been fabricated from urania.
Sulfurization of copper indium gallium diselenide (CIGS) thin films solar cell absorber has been attempted to enhance the open circuit voltage of the device by increasing the band gap of the absorber near the interface. The homogeneous co-evaporated Cu(InGa)Se 2 thin film was used for sulfurization. The sulfurization was studied in hydrogen sulfide and mixture of hydrogen sulfide and hydrogen...
In this paper, p-type hydrogenated nanocrystalline (nc-Si:H) films were prepared on corning 7059 glass by plasma-enhanced chemical vapor deposition (PECVD) system. The films were deposited with radio frequency (RF) (13.56 MHz) power and direct current (DC) biases stimulation conditions. Borane (B 2 H 6 ) was a doping agent, and the flow ratio η of B 2 H 6 component...
The aim of this study is to synthesis large area, plastic compatible of p-type nanocrystalline silicon through conventional sputter system. The growth of and p-type doping of nanocrystalline silicon onto plastic substrates using D.C. magnetron sputtering was investigated. The film properties were examined by Raman spectroscopy, X-ray Diffraction, scanning electron microscopy and energy dispersive...
ITO thin films were prepared by changing the experimental parameters including gas flow ratio, sputtering pressure and sputtering time in DC magnetron sputtering equipment. The stable experimental parameters of Ar flow at 70 sccm, O 2 flow at 2.5 sccm ∼ 3.0 sccm, sputtering pressure around 0.5 Pa, and sputtering time of 80 s were obtained. Under these parameters, we had achieved the ITO thin...
In this paper we report on flexible a-Si:H solar cells prepared on polyethylene naphthalate (PEN) substrates using p-type hydrogenated nanocrystalline silicon thin films (p-nc-Si:H) as the window layer. The p-nc-Si:H films were prepared at low temperature (150 °C) using trimethylboron (TMB) as a dopant gas. The influence of the silane concentration (SC) on the electrical and structural properties...
Depositing microcrystalline intrinsic silicon films is an important step for the production of thin silicon tandem junction solar cells. Due to the high cost of capital equipment, it is becoming increasingly important to improve the processing speed of thin silicon films for continued commercial viability. In this work, a combination of the excitation frequencies 13.56MHz + 27.12 MHz was used for...
CuIn(S,Se) 2 (CISSe) thin films have been prepared onto soda-lime-glass (SLG) substrates by selenization and sulfurization of magnetron sputtered Cu–In precursors. The results indicate that the properties of the CISSe films are strongly dependent on the post-annealing treatment. After annealing at 400 °C for 20 min, the CISSe films have formed tetragonal (chalcopyrite) crystal structure and...
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