Intrinsic nanocrystalline silicon films (nc-Si:H) were prepared by plasma enhanced chemical vapor deposition (PECVD) method. Films’ microstructures and characteristics were studied with Raman spectroscopy and Atom Force Microscope (AFM). The electronic conductivity of nc-Si:H films was found to be 4.9×10 0 Ω −1 cm −1 , which was one order of magnitude higher thanthe reported 10 −3 –10 −1 Ω −1 cm −1 . And PIN solar cells with nc-Si:H film as intrinsic thin-layer (ITO/n + -nc-Si:H/i-nc-Si:H/p-c-Si/Ag) were researched. The cell's performances were measured, the open-circuit voltage V oc was 534.7mV, short-circuit current I sc was 49.24mA (3cm 2 ) and fill factor FF was 0.4228.