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The root cause of degradation and failure in nanoscale logic and memory devices originates from discrete defects (traps) that are created in the ultra-thin dielectrics during fabrication (process-induced) and / or voltage and temperature stress (stress-induced). In order to probe the chemistry of every discrete trap in terms of its bond state, charge state, physical location, region of influence,...
This paper discusses a thermal reliability testing experiment and failure analysis (FA) in 32nm SOI Si technology chip packages. Thermal performance of the TIM materials is monitored and physical failure analysis is performed on test vehicle packages post thermal reliability test. Thermomechanical modeling is conducted for different test conditions. TIM thermal degradation is observed at the chip...
In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress...
Place a Die breaking strength is related to the surface morphology of the die. Existing of the defects on the die backside makes die fracture becomes a more severe problem in the microelectronic package. In this study, impact of the die backside defects on the stress is investigated by mechanical theories. Finite element method and 3 point bending test are used to verify the theory prediction. Thin...
Reliability study of high-κ (HK) gate dielectric based transistors has become imperative for the current and future CMOS technology nodes as the industry shifts towards replacement of conventional silicon oxynitride (SiON) with hafnium-based oxides. One of the key requirements of any oxide reliability study is a quantitative assessment of the time dependent dielectric breakdown (TDDB) lifetime using...
In order to achieve aggressive scaling of the equivalent oxide thickness (EOT) and simultaneously reduce leakage currents in logic devices, silicon-based oxides (SiON / SiO2) have been replaced by physically thicker high-κ transition metal oxide thin films by many manufacturers starting from the 45 nm technology node. CMOS process compatibility, integration and reliability are the key issues to address...
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