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Light trapping is essential to improve the performance of thin film solar cells. In this paper, we performed a parametric optimization of double sided nanopyramid arrays that act as light trapping scheme to increase light absorption in thin-film c-Si solar cells. Our theoretical optimization reveals that the short-circuit current density in a solar cell employing only 1 μm silicon could reach as high...
This paper presents a vacuum encapsulation technique with novel parasitic optimization methods for VHF MEMS resonators. Sn-rich Au-Sn solder bonding is used to achieve reliable hermetic packaging with high shear strength. An equivalent circuit model of the packaged resonator is established to analyze the parasitic effect caused by encapsulation. Reduction of the parasitic effect is achieved via grounding...
Due to the high Schottky barrier height, traditional AlGaN/GaN SBD always has large turn-on voltage. In this paper, a low turn-on voltage cascode AlGaN/GaN SBD Si realized. A commercial 60 V Si SBD and a high voltage AlGaN/GaN HEMT (>700 V) were used in the design. After co-packaged, the device shows a turn-on voltage with 0.26 V and the breakdown voltage can reach up to 800 V. The reversed recovery...
This paper presents a RF MEMS oscillator with high frequency stability and low phase noise. The oscillator consists of MEMS disk resonator and low noise feedback circuits. The two-port radial-contour-mode silicon resonator was fabricated with high Q-factor and hermetically encapsulated using Sn-rich Au-Sn solder bonding, which significantly improves the frequency stability. A PCB-based oscillator...
A novel microcantilever biosensor was batch-fabricated with IC compatible MEMS technology for joint detection of liver cancer biomarkers with high sensitivity, high throughput, high specification, and good precision. A micro-cavity was designed in the free end of the cantilever for local antibody-immobilization using micro printing system, which can dramatically reduce the effect of adsorption-induced...
Individual donor atoms within silicon nanoscale devices are promising candidates as the building blocks in quantum computing. In this work, we report the electron transport behaviors through the arrays of phosphorus atoms in a heavily n-doped silicon junctionless nanowire transistor. The multiple-split current peak features are observed due to the interdot coupling in the initial stage of conduction...
A key issue in physical-layer network coding (PLNC) is how to recover the network-coded packet by the relay from the superimposed signals transmitted simultaneously by multiple transmitters. In order to decode correctly, the asynchrony between signals must be perfectly dealt with. That is, symbols transmitted by different transmitters could arrive at the receiver with relative carrier frequency offset...
Sn-rich Au-Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level hermetic packaging of high-end MEMS devices. The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of Au-Sn system makes major contribution to the high bonding strength. The maximum shear strength of 64 MPa and a leak rate lower than 1 × 10−7 torr·l/s...
Two types of RF LDMOS devices are developed by introducing LDMOS process to standard CMOS fab. The basic device structure is described and the load pull test setup was put up to evaluate the RF performance of both devices. Besides, an impedance transformer was utilized to minimize the mismatch between system and device impedance as well as increase measurement accuracy. The first type is 50V RF LDMOS...
This paper introduces two novel approaches to effectively eliminate the influence of the scattering light from the wafer chuck and enhance the lithography precision of the SU-8 photoresist on a glass substrate. The first method is based on the complete reflection of light from Si substrate, and the second one employs materials which has low optical transparency and can achieve complete absorption...
This paper considers iterative carrier recovery for continuous transmission. To overcome the potential cycle slip, we propose to employ the distributed pilots with minor overhead for framing. By extensive simulations, we found that the probability of the cycle slip may be very low and not observed in simulations with distributed pilots for the rate-1/3 LDPC coded QPSK modulation at very low signal-to-noise...
Electroless Deposition (ELD) method was developed to fabricate metal nanoplug heater for vertical Phase-Change Random Access Memory (PCRAM) application. We demonstrated a functional vertical PCRAM device with heater diameter size around 9 μm by ELD method without Chemical Mechanical Planarization (CMP) process. It was also demonstrated that even 50 nm and 90 nm metal nanoplug can be easily fabricated...
The magnetic-type plasmon resonant of a metal-dielectric-metal nanocavity working at the wavelength of 1.55 mum is explored, in which the upper layer is periodically patterned with metallic nanostrip arrays. In the dielectric film layer, the magnetic energy intensity is enhanced about 1700 times when irradiated with a p-polarized plane wave. We numerically studied the dispersion of the modes and the...
In this paper, the SiC-based clamped-clamped filter was designed and fabricated. The filter was composed of two clamped-clamped beam micromechanical resonators coupled by a spring coupling beam. Structural geometries, including the length and width of the resonator beam and coupling beam, were optimized by simulation for high frequency and high Q, under the material properties of SiC. The vibrating...
Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectromechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon...
The traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors (SET) has been considered three states (including an excited state) of the discrete quantum energy levels...
A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique.
VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400degC for 2 hours. The film also shows a polycrystal structure with grain size from 50 nm to 150 nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate...
A novel process of room temperature ion beam sputtering deposition of vanadium oxide films and low temperature post annealing for uncooled infrared detectors was proposed in this work. VOx thin films with relatively low square resistance (70 K Omega / square) and large temperature coefficient of resistance (more than 3%/K) at room temperature were fabricated using this low temperature process which...
Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus Eps, prestress s0, and fracture strength smax of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates...
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