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We present the design of an InP millimeter-wave VCO which is coupled to a static frequency divider to produce a millimeter wave clock signal. The VCO has a center frequency of 53.4 GHz, a tuning range of 2.4 GHz, and a phase noise of -89 dBc/Hz (at 1 MHz offset frequency), giving an output clock frequency of 26.7 GHz. This clock is capable of generating single ended, differential, or quadrature output...
InP HBTs have been considered over GaAs HBTs as one of the most promising technology to realize ultra wideband applications due to its wide bandwidth, lower 1/f noise, and high current driving capability, good linearity and good uniformity of threshold voltage distribution for mixed signal circuit applications. Since the report of SiGe HBT with Ft> 350 GHz by IBM in 2002, InP HBT has achieved record...
Graded InGaAsSb:C base double heterojunction bipolar transistors (DHBT) were grown on InP to enhance the electron transit time through the base region. A record high unity current gain frequency fT of 500 GHz is achieved in the DHBT with a 250 Aring thick InGaAsSb:C linear graded base
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