The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Hybrid-phase-transition FETs (Hyper-FETs) are recently proposed steep switching devices that utilize the phase transition materials (PTM) to achieve a boost in the ratio of ON (${I}_{{{\mathrm {ON}}}})$ and OFF currents (${I}_{{{\mathrm {OFF}}}})$ . Prototypical demonstrations of the Hyper-FET have shown performance improvement in comparison with conventional transistors, which motivates the evaluation...
Cross-point architectures are promising for designing dense memory arrays. However, sneak current paths in a cross-point array necessitates the use of non-linear selectors. In this paper, we analyze the potential of employing correlated materials exhibiting abrupt insulator-metal transitions as selectors to design cross-point memories based on magnetic tunnel junctions (MTJs). We analyze the properties...
We analyze the effect of hysteresis in the correlated material (CM) based selector devices on the choice of the word-line and bit-line voltages of a cross-point memory array. Considering a magnetic tunnel junction as the memory device, we also evaluate the dependence of array leakage and performance on the CM characteristics. While insulator-to-metal transition (IMT) in the CM plays a pivotal role...
We present a novel technique for optimizing the read operation of spin-transfer torque (STT) MRAMs by employing a correlated material in conjunction with a magnetic tunnel junction (MTJ). The design of the proposed memory cell is based on exploiting the orders-of-magnitude difference in the resistance of the two phases of the correlated material (CM) and triggering operation-driven phase transitions...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.