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Distinction between triple gate (TG) and double gate (DG) silicon-on-insulator (SOI) FinFETs is presented here on the basis of their electrostatic and transport characteristics. A study missing in previous works on DG and TG FinFETs is the characterization of these structures with respect to the variation of top oxide thickness. In fact an exact value of the top-oxide thickness that can differentiate...
In this paper we investigate the effect of spacer layer on 2DEG concentration in In0.05Ga0.95N/InN HEMT for the first time using quantum mechanical (QM) model based on the solution of one dimensional Schrodinger-Poisson equation. The model incorporates QM effect for accurate estimation of 2DEG concentration. This model includes the effect of polarization and the effect of gate voltage (Vg) on Fermi...
Capacitance-voltage (C-V) characteristics of triple-gate (TG) and double gate (DG) silicon-on-insulator (SOI) FinFETs having sub 10 nm dimensions are obtained by self consistent method using coupled Schro??dinger-Poisson solver taking into account quantum mechanical effects. Though self-consistent simulation to determine current and short channel effects in these devices has been reported in recent...
The quantum definition based threshold voltage has been evaluated for triple-gate (TG) SOI FinFETs using self-consistent Schrodinger-Poisson solver. Although a new quantum definition of threshold voltage for multiple gate SOI MOSFETs has been provided in recent literature, in-depth analysis of quantization effects on threshold voltage calculation for highly scaled TG FinFETs is yet to be done. In...
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