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Nano-wedge structured resistive switching memory is fabricated through modifying bottom electrode structure and the DC characteristics of devices are analyzed. Excellent data storage capability is proved through retention test by setting at high temperature over 104 seconds in both low and high resistance states (LRS and HRS). Endurance test is also performed to demonstrate outstanding characteristics...
Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO??). Enhancement probe and I-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.
A novel asymmetric MOSFET with no lightly doped drain on the source side is simulated on bulk Si using a device simulator (SILVACO). To overcome the problems of the conventional asymmetric process, a novel asymmetric MOSFET using a mesa structure and a sidewall spacer gate is proposed, and it provides a self-alignment process, aggressive scaling, and better uniformity. First of all, we have compared...
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