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Nano-wedge structured resistive switching memory is fabricated through modifying bottom electrode structure and the DC characteristics of devices are analyzed. Excellent data storage capability is proved through retention test by setting at high temperature over 104 seconds in both low and high resistance states (LRS and HRS). Endurance test is also performed to demonstrate outstanding characteristics of the resistive switching memory device.
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea