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This paper presents both analytical models and Monte Carlo simulations concerning strain engineering in n-type silicon FinFETs. Our analysis identifies the stress configurations and the physical mechanisms able to produce a significant stress-induced mobility enhancement and provides the insight necessary for device optimization. We first derive analytical expressions for the stress-induced changes...
This study combines direct measurements of channel strain, electrical mobility measurements and a rigorous modeling approach to provide insight about the strain induced mobility enhancement in FinFETs and guidelines for the device optimization. Good agreement between simulated and measured mobility is obtained using strain components measured directly at device level by a novel technique. A large...
This paper presents both analytical models and numerical simulations concerning strain engineering in n-FinFETs. Our analysis identifies the mechanisms for the stress induced mobility enhancement and provides insight for the stress optimization.
We present a new, PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, which is suitable for digital, analog, and RF circuit simulation. The model is surface potential based and is demonstrated to accurately describe both TCAD data and measured FinFET currents, conductances, and capacitances
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