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In order to realize load current imbalance measuring for paralleling IGBT devices, the authors propose a novel method for measuring the imbalances from IGBT gate charge. In the study, an analytical model between gate charge and on-state current has been worked out to find the current differences of IGBT among each paralleled sub-circuits. The results from simulation show that the analytical model...
An analytical model is proposed in this paper for the surface electric field around the drain-side gate edge in the AlGaN/GaN HEMT to which the gate leakage, current collapse, and so on are highly related. Conformal mapping is implemented to mirror the device structure into a simplified geometry and the solution to the Laplace equation is thus achieved. Obtained from the proposed model, the surface...
A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called buried N-region controlled anode LIGBT (BNCA-LIGBT), is proposed and discussed. The BNCA-LIGBT is a modified structure of the N-region controlled anode LIGBT (NCA-LIGBT) which we have presented earlier. Numerical simulation results of the BNCA-LIGBT operation show that the turn-off speed is faster and on-state...
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