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This paper presents one fabrication process of a triple-layer stacked TSV interposer for switch matrix consisting of eight RF chips. There are about 600 TSVs in the interposer and the diameter of TSV is 40um with the aspect ratio being 4:1. The whole area of the interposer is 13.5 mm × 7.5mm and the thickness of the triple-layer stacked interposer is only about 0.7mm. After the process, the electrical...
Research is increasingly focusing on energy harvesting as energy demands continue to rise and natural resources begin to deplete. This paper briefly introduces a basic framework of the rectifying antenna (rectenna) system and three different examples of rectennas for RF energy harvesting and wireless power transmission.
This paper presents the fabrication process of a TSV interposer for RF chip with integrated passive devices. The passive devices fabricated by lift-off process of thin film include a thin-film resistor and three parallel-plate capacitors. The whole area of the interposer is 5.7 mm × 5mm and the thickness of interposer is only about 160um. Compared to traditional RF systems with discrete passive devices...
In this paper, a thick TSV interposer with integrated inductor, micro-strip and coplanar waveguides(CPW) transmission lines on high resistivity Si substrate is presented for 2.5 D integration of RF devices. The electrical interconnection through Si interposer is realized by two individual pieces of holly Cu TSVs of different diameters assembled at the axis. Metallization is realized with a redistribution...
In this paper, a simplified process for TGV interposer is presented for RF applications. Sand blasting method and thinning/polishing process is utilized to form TGVs on Glass wafer. TGV interposer metallization of is realized with Al sputtering followed by wet chemical etching. Based on the process, TGV interposer is fabricated and the TGV sample measures about 361µm in the diameter at the front side,...
Tunnel diode body contact (TDBC) MOSFETs is used to suppress floating body effects (FBE) and achieve significant improvement in RF performance. For the first time, low frequency noise (LF noise) of TDBC MOSFETs, also called 1/f noise, is reported in this paper. LF noise performance of floating body (FB), T-gate body contact (TB) and TDBC MOSFET fabricated in 0.13 µm Smart-Cut partially depleted (PD)...
Emotion is an important indicator of depressive conditions. Emotion recognition based on physiological signals such as electroencephalogram (EEG) and functional near-infrared spectroscopy (fNIRS) has gained significant attraction in healthcare domain research. Sharing of physiological signal data related to emotional response between different healthcare systems has the potential to benefit both laboratory-based...
The influence of back-gate bias on DC and RF characteristics in C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) was investigated. The experimental result indicates that a positive substrate bias is very effective in RC and hysteresis reduction, and further improves the maximum fT from 16 to 53GHz. Analytical relationships are developed to quantify the impact of substrate bias...
Tapered TSV interconnection has begun used in CMOS Image Senor (CIS) and currently is penetrating its application in other areas, such as MEMS devices and Si Interposer. It helps relive the technical difficulties of conformal deposition of insulation layer and conducting layer and therefore it's helpful for yield improvement and cost reduction. Besides that, it helps also relieve the stress accumulation...
Wireless systems that form a body-area network must be made small and low power without sacrificing performance. To achieve high-throughput communication in low-cost wireless body area networks, we propose a low complexity,??pulling?? MAC protocol. Such a network architecture consists of low-complexity nodes and moderate complexity base stations, which act as clients to pull data from the nodes that...
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