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Sapphire substrate was treated by SiH4 under NH3 atmosphere and nano-size islands SiNx mask was formed on the surface. GaN films were grown on the SiNxpatterned sapphire substrates to form GaN/SiNx/Al2O3 structure. The influence of SiH4 treatment time on crystalline quality and luminance properities of GaN films were studied. The lowest density of screw and edge type dislocations of 1.3×108 cm−2 and...
E/D mode GaN HEMTs and DCFL-based inverter were monolithically fabricated on Si-based GaN material. Selective barrier thinning method and MIS structure were used to realize GaN E/D mode HEMTs integration. E/D mode GaN HEMTs with threshold voltage of 2.6 V and 7 V were obtained respectively. DCFL-based inverter with high state noise margin of 0.95V and low state noise margin of 0.63V was also obtained...
A novel structure of AlGaN/GaN heterostructure which has a high temperature AlN interlayer (HT-AlN) in GaN buffer grown by metal organic chemical vapor deposition(MOCVD) on c-plane sapphire substrate has been researched. It is found that both electron mobility and sheet carrier concentration are increased by the HT-AlN interlayer compared to AlGaN/GaN heterostructure without HT-AlN interlayer. The...
We have developed a novel AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor using a stack gate HfO2/Al2O3 structure grown by atomic layer deposition. The stack gate consists of a thin HfO2 (30-A) gate dielectric and a thin Al2O3 (20- A) interfacial passivation layer (IPL). For the 50-A stack gate, no measurable C-V hysteresis and a smaller threshold voltage shift were observed,...
Through a comparative study of the scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) results, polarity is found to play an important role in the GaN wet etching process. For the pure screw dislocation it is easy to be etched along the steps that the dislocation terminates. Consequently a small Ga-polar plane is formed to prevent further vertical etching,...
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